IRFR420, IRFU420, SiHFR420, SiHFU420 www.vishay.com Vishay Siliconix Power MOSFET FEATURES D Dynamic dV/dt rating DPAK IPAK Repetitive avalanche rated (TO-252) (TO-251) Surface-mount (IRFR420, SiHFR420) D D Straight lead (IRFU420, SiHFU420) G Available in tape and reel Available Fast switching S G S D Ease of paralleling G S Material categorization: for definitions of compliance N-Channel MOSFET please see www.vishay.com/doc 99912 DESCRIPTION PRODUCT SUMMARY Third generation power MOSFETs from Vishay provide the V (V) 500 DS designer with the best combination of fast switching, R ()V = 10 V 3.0 DS(on) GS ruggedized device design, low on-resistance and Q max. (nC) 19 cost-effectiveness. g Q (nC) 3.3 The DPAK is designed for surface mounting using vapor gs phase, infrared, or wave soldering techniques. The straight Q (nC) 13 gd lead version (IRFU, SiHFU series) is for through-hole Configuration Single mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface-mount applications. ORDERING INFORMATION Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251) a a a SiHFR420-GE3 SiHFR420TR-GE3 SiHFR420TRL-GE3 SiHFR420TRR-GE3 SiHFU420-GE3 Lead (Pb)-free and halogen-free IRFR420PbF-BE3 IRFR420TRPbF-BE3 IRFR420TRLPbF-BE3 - - a a a Lead (Pb)-free IRFR420PbF IRFR420TRPbF IRFR420TRLPbF IRFR420TRRPbF IRFU420PbF Note a. See device orientation ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 500 DS V Gate-source voltage V 20 GS T = 25 C 2.4 C Continuous drain current V at 10 V I GS D T = 100 C 1.5 A C a Pulsed drain current I 8.0 DM Linear derating factor 0.33 W/C e Linear derating factor (PCB mount) 0.020 b Single pulse avalanche energy E 400 mJ AS a Repetitive avalanche current I 2.4 A AR a Repetitive avalanche energy E 4.2 mJ AR Maximum power dissipation T = 25 C 42 C P W D e Maximum power dissipation (PCB mount) T = 25 C 2.5 A c Peak diode recovery dV/dt dV/dt 3.5 V/ns Operating junction and storage temperature range T , T -55 to +150 J stg C d Soldering recommendations (peak temperature) For 10 s 260 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. V = 50 V, starting T = 25 C, L = 124 mH, R = 25 , I = 2.4 A (see fig. 12) DD J g AS c. I 2.4 A, dI/dt 50 A/s, V V , T 150 C SD DD DS J d. 1.6 mm from case e. When mounted on 1 square PCB (FR-4 or G-10 material) S21-0771-Rev. F, 19-Jul-2021 Document Number: 91275 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFR420, IRFU420, SiHFR420, SiHFU420 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYPMAX.UNIT Maximum junction-to-ambient R - 110 thJA a Maximum junction-to-ambient (PCB mount) R -50 C/W thJA Maximum junction-to-case (drain) R -3.0 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material) SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 500 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.59 - V/C DS DS J D Gate-source threshold voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-source leakage I V = 20 V - - 100 nA GSS GS V = 500 V, V = 0 V - - 25 DS GS Zero gate voltage drain current I A DSS V = 400 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-source on-state resistance R V = 10 V I =1.4 A -- 3.0 DS(on) GS D Forward transconductance g V = 50 V, I = 1.4 A 1.5 - - S fs DS D Dynamic Input capacitance C - 360 - iss V = 0 V, GS Output capacitance C -9V = 25 V, 2- pF oss DS f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -37- rss Total gate charge Q -- 19 g I = 2.1 A, V = 400 V, D DS Gate-source charge Q --V = 10 V 3.3 nC gs GS b see fig. 6 and 13 Gate-drain charge Q --13 gd Turn-on delay time t -8.0 - d(on) Rise time t -8.6 - r V = 250 V, I = 2.1 A, DD D ns b R = 18 , R = 120 , see fig. 10 Turn-off delay time t -3g D 3- d(off) Fall time t -16- f Gate input resistance R f = 1 MHz, open drain 1.8 - 12.6 g D Between lead, Internal drain inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G die contact Internal source inductance L -7.5 - S S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- 2.4 S showing the A integral reverse G a p - n junction diode Pulsed diode forward current I -- 8.0 SM S b Body diode voltage V T = 25 C, I = 2.4 A, V = 0 V -- 1.6 V SD J S GS Body diode reverse recovery time t - 260 520 ns rr b T = 25 C, I = 2.1 A, dI/dt = 100 A/s J F Body diode reverse recovery charge Q -0.70 1.4 C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % S21-0771-Rev. F, 19-Jul-2021 Document Number: 91275 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000