IRFP460A, SiHFP460A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Q Results in Simple Drive g V (V) 500 DS Available Requirement R ()V = 10 V 0.27 DS(on) GS Improved Gate, Avalanche and Dynamic dV/dt RoHS* Q (Max.) (nC) 105 COMPLIANT g Ruggedness Q (nC) 26 gs Fully Characterized Capacitance and Avalanche Voltage Q (nC) 42 and Current gd Configuration Single Effective C Specified oss Compliant to RoHS Directive 2002/95/EC D APPLICATIONS TO-247 Switch Mode Power Supply (SMPS) Uninterruptable Power Supply G High Speed Power Switching TYPICAL SMPS TOPOLOGIES S Full Bridge D S G PFC Boost N-Channel MOSFET ORDERING INFORMATION Package TO-247 IRFP460APbF Lead (Pb)-free SiHFP460A-E3 IRFP460A SnPb SiHFP460A ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 500 DS V Gate-Source Voltage V 30 GS T = 25 C 20 C Continuous Drain Current V at 10 V I GS D T = 100 C 13 A C a Pulsed Drain Current I 80 DM Linear Derating Factor 2.2 W/C b Single Pulse Avalanche Energy E 960 mJ AS a Repetitive Avalanche Current I 20 A AR a Repetitive Avalanche Energy E 28 mJ AR Maximum Power Dissipation T = 25 C P 280 W C D c Peak Diode Recovery dV/dt dV/dt 3.8 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 10 lbf in Mounting Torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Starting T = 25 C, L = 4.3 mH, R = 25 , I = 20 A (see fig. 12). J g AS c. I 20 A, dI/dt 125 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91234 www.vishay.com S09-1284-Rev. B, 13-Jul-09 1IRFP460A, SiHFP460A Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -40 thJA Case-to-Sink, Flat, Greased Surface R 0.24 - C/W thCS Maximum Junction-to-Case (Drain) R -0.45 thJC SPECIFICATIONS T = 25 C, unless otherwise noted J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 500 - - DS GS D V V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.61 - DS DS J D V/C Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 30 V - - 100 nA GSS GS V = 500 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 400 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 12 A -- 0.27 DS(on) GS D b Forward Transconductance g V = 50 V, I = 12 A 11 - - fs DS D S Dynamic Input Capacitance C - 3100 - iss V = 0 V, GS Output Capacitance C -V = 25 V, 480- oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -18- rss pF V = 1.0 V, f = 1.0 MHz 4430 DS Output Capacitance C oss V = 0 V V = 400 V, f = 1.0 MHz 130 GS DS c Effective Output Capacitance C eff. V = 0 V to 400 V 140 oss DS Total Gate Charge Q - - 105 g I = 20 A, V = 400 V, D DS Gate-Source Charge Q --V = 10 V 26 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --42 gd Turn-On Delay Time t -18 - d(on) Rise Time t -55 - r V = 250 V, I = 20 A, DD D ns b Turn-Off Delay Time t -4R = 4.3 , R = 13 , see fig. 105- G D d(off) Fall Time t -39- f Drain-Source Body Diode Characteristics MOSFET symbol Continuous Source-Drain Diode Current I D -- 20 S showing the A integral reverse G a Pulsed Diode Forward Current I -- 80 SM p - n junction diode S b Body Diode Voltage V T = 25 C, I = 20A, V = 0 V -- 1.8 V SD J S GS Body Diode Reverse Recovery Time t - 480 710 ns rr b T = 25 C, I = 20 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -5.0 7.5 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. c. C eff. is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V . oss oss DS DS www.vishay.com Document Number: 91234 2 S09-1284-Rev. B, 13-Jul-09