IRFDC20, SiHFDC20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating V (V) 600 DS Available Repetitive Avalanche Rated R ()V = 10 V 4.4 DS(on) GS RoHS* For Automatic Insertion COMPLIANT Q (Max.) (nC) 18 g End Stackable Q (nC) 3.0 gs Fast Switching Q (nC) 8.9 gd Ease of Paralleling Configuration Single Simple Drive Requirements D Compliant to RoHS Directive 2002/95/EC HVMDIP DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, G ruggedized device design, low on-resistance and cost-effectiveness. S G The 4 pin DIP package is a low cost machine-insertable case D style which can be stacked in multiple combinations on S standard 0.1 pin centers. The dual drain serves as a thermal N-Channel MOSFET link to the mounting surface for power dissipation levels up to 1 W. ORDERING INFORMATION Package HVMDIP IRFDC20PbF Lead (Pb)-free SiHFDC20-E3 IRFDC20 SnPb SiHFDC20 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 600 DS V Gate-Source Voltage V 20 GS T = 25 C 0.32 A Continuous Drain Current V at 10 V I GS D T = 100 C 0.20 A A a Pulsed Drain Current I 2.6 DM Linear Derating Factor 0.0083 W/C b Single Pulse Avalanche Energy E 50 mJ AS a Repetitive Avalanche Current I 0.32 A AR a Repetitive Avalanche Energy E 0.10 mJ AR Maximum Power Dissipation T = 25 C P 1.0 W A D c Peak Diode Recovery dV/dt dV/dt 3.0 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 50 V, starting T = 25 C, L = 54 mH, R = 25 , I = 1.3 A (see fig. 12). DD J g AS c. I 4.4 A, dI/dt 90 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91142 www.vishay.com S10-2464-Rev. C, 25-Oct-10 1 IRFDC20, SiHFDC20 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R - 120 C/W thJA SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 600 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.88 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = 600 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 480V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 0.19 A -- 4.4 DS(on) GS D b Forward Transconductance g V = 50 V, I = 1.3 A 1.4 - - S fs DS D Dynamic Input Capacitance C - 350 - iss V = 0 V, GS Output Capacitance C -4V = 25 V, 8- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -8.6- rss Total Gate Charge Q -- 18 g I = 2.0 A, V = 360 V, D DS Gate-Source Charge Q --V = 10 V 3.0 nC gs GS b see fig.6 and 13 Gate-Drain Charge Q --8.9 gd Turn-On Delay Time t -10 - d(on) Rise Time t -23 - r V = 300 V, I = 2.0 A, DD D ns R = 18 , R = 150 g D Turn-Off Delay Time t -30- d(off) b see fig. 10 Fall Time t -25- f D Between lead, Internal Drain Inductance L -4.0 - D 6 mm (0.25 ) from nH package and center of G Internal Source Inductance L -6.0 - S die contact S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I - - 0.32 S showing the A G integral reverse a Pulsed Diode Forward Current I -- 2.6 SM p - n junction diode S b Body Diode Voltage V T = 25 C, I = 0.32 A, V = 0 V -- 1.6 V SD J S GS Body Diode Reverse Recovery Time t - 290 580 ns rr b T = 25 C, I = 2.0 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q - 0.67 1.3 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % www.vishay.com Document Number: 91142 2 S10-2464-Rev. C, 25-Oct-10