IRF9640S, SiHF9640S, IRF9640L, SiHF9640L www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Surface mount V (V) -200 Available in tape and reel DS Dynamic dV/dt rating R ( )V = -10 V 0.50 DS(on) GS Available Repetitive avalanche rated Q max. (nC) 44 g P-channel Q (nC) 7.1 gs Fast switching Available Q (nC) 27 Ease of paralleling gd Material categorization: for definitions of Configuration Single compliance please see www.vishay.com/doc 99912 Note S * This datasheet provides information about parts that are 2 RoHS-compliant and / or parts that are non-RoHS-compliant. For 2 D PAK (TO-263) I PAK (TO-262) example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details. G DESCRIPTION G Third generation power MOSFETs from Vishay provide the D S designer with the best combination of fast switching, D S G ruggedized device design, low on-resistance and cost-effectiveness. 2 D The D PAK (TO-263) is a surface mount power package. It provides the highest power capability and the lowest P-Channel MOSFET possible on-resistance in any existing surface mount 2 package. The D PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRF9640L, SiHF9640L) is available for low-profile applications. ORDERING INFORMATION 2 2 2 2 Package D PAK (TO-263) D PAK (TO-263) D PAK (TO-263) I PAK (TO-262) Lead (Pb)-free and Halogen-free SiHF9640S-GE3 - - SiHF9640L-GE3 a a IRF9640SPbF IRF9640STRLPbF IRF9640STRRPbF IRF9640LPbF Lead (Pb)-free a a SiHF9640S-E3 SiHF9640STL-E3 SiHF9640STR-E3 SiHF9640L-E3 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V -200 DS V Gate-Source Voltage V 20 GS T = 25 C -11 C Continuous Drain Current V at -10 V I GS D T = 100 C -6.8 A C a Pulsed Drain Current I -44 DM Linear Derating Factor 1.0 W/C e Linear Derating Factor (PCB mount) 0.025 b Single Pulse Avalanche Energy E 700 mJ AS a Avalanche Current I -11 A AR a Repetitive Avalanche Energy E 13 mJ AR Maximum Power Dissipation T = 25 C 125 C P W D e Maximum Power Dissipation (PCB mount) T = 25 C 3.0 A c Peak Diode Recovery dV/d dV/dt -5.0 V/ns Operating Junction and Storage Temperature Range T , T -55 to +150 J stg C d Soldering Recommendations (Peak temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = -50 V, starting T = 25 C, L = 8.7 mH, R = 25 , I = -11 A (see fig. 12). DD J g AS c. I -11 A, dI/dt 150 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. e. When mounted on 1 square PCB (FR-4 or G-10 material). S16-0754-Rev. E, 02-May-16 Document Number: 91087 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRF9640S, SiHF9640S, IRF9640L, SiHF9640L www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA Maximum Junction-to-Ambient R -40 C/W thJA a (PCB mount) Maximum Junction-to-Case (Drain) R -1.0 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material). SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = -250 A -200 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = -1 mA - -0.20 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = -250 A -2.0 - -4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = -200 V, V = 0 V - - -100 DS GS Zero Gate Voltage Drain Current I A DSS V = -160 V, V = 0 V, T = 125 C - - -500 DS GS J b Drain-Source On-State Resistance R V = -10 V I = 6.6 A - - 0.50 DS(on) GS D b Forward Transconductance g V = -50 V, I = -6.6 A 4.1 - - S fs DS D Dynamic Input Capacitance C - 1200 - iss V = 0 V, GS Output Capacitance C -V = -25 V, 370- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -81- rss Total Gate Charge Q -- 44 g I = -11 A, V = -160 V, D DS Gate-Source Charge Q --V = -10 V 7.1 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --27 gd Turn-On Delay Time t -14 - d(on) Rise Time t -43 - r V = -100 V, I = -11 A, DD D ns b R = 9.1 , R = 8.6 , see fig. 10 Turn-Off Delay Time t -3g D 9- d(off) Fall Time t -38- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH G package and center of Internal Source Inductance L -7.5 - S die contact S Gate Input Resistance R f = 1 MHz, open drain 0.3 - 1.7 g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- -11 S showing the A integral reverse G a p -n junction diode Pulsed Diode Forward Current I -- -44 SM S b Body Diode Voltage V T = 25 C, I = -11 A, V = 0 V -- -5.0 V SD J S GS Body Diode Reverse Recovery Time t - 250 300 ns rr b T = 25 C, I = -11 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -2.9 3.6 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. S16-0754-Rev. E, 02-May-16 Document Number: 91087 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000