IRF830A, SiHF830A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Q Results in Simple Drive g V (V) 500 DS Available Requirement R ()V = 10 V 1.4 DS(on) GS RoHS* Improved Gate, Avalanche and Dynamic dV/dt Q (Max.) (nC) 24 COMPLIANT g Ruggedness Q (nC) 6.3 gs Fully Characterized Capacitance and Avalanche Voltage Q (nC) 11 gd and Current Configuration Single Effective C Specified oss Compliant to RoHS Directive 2002/95/EC D TO-220AB APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptable Power Supply G High Speed power Switching TYPICAL SMPS TOPOLOGIES S D G Two Transistor Forward S Half Bridge N-Channel MOSFET Full Bridge ORDERING INFORMATION Package TO-220AB IRF830APbF Lead (Pb)-free SiHF830A-E3 IRF830A SnPb SiHF830A ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 500 DS V Gate-Source Voltage V 30 GS T = 25 C 5.0 C Continuous Drain Current V at 10 V I GS D T = 100 C 3.2 A C a Pulsed Drain Current I 20 DM Linear Derating Factor 0.59 W/C b Single Pulse Avalanche Energy E 230 mJ AS a Repetitive Avalanche Current I 5.0 A AR a Repetitive Avalanche Energy E 7.4 mJ AR Maximum Power Dissipation T = 25 C P 74 W C D c Peak Diode Recovery dV/dt dV/dt 5.3 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 10 lbf in Mounting Torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Starting T = 25 C, L = 18 mH, R = 25 , I = 5.0 A (see fig. 12). J g AS c. I 5.0 A, dI/dt 370 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91061 www.vishay.com S11-0507-Rev. C, 21-Mar-11 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRF830A, SiHF830A Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA Case-to-Sink, Flat, Greased Surface R 0.50 - C/W thCS Maximum Junction-to-Case (Drain) R -1.7 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 500 - - DS GS D V V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.60 - DS DS J D V/C Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - GS(th) DS GS D 4.5 V Gate-Source Leakage I V = 30 V - - 100 nA GSS GS V = 500 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 400 V, V = 0 V, T = 125 C - - DS GS J 250 b Drain-Source On-State Resistance R V = 10 V I = 3.0 A -- DS(on) GS D 1.4 b Forward Transconductance g V = 50 V, I = 3.0 A 2.8 - - fs DS D S Dynamic V = 0 V, Input Capacitance C -620 - GS iss Output Capacitance C -9V = 25 V, 3- oss DS Reverse Transfer Capacitance C -4.3- f = 1.0 MHz, see fig. 5 rss pF Output Capacitance C V = 0 V V = 1.0 V, f = 1.0 MHz 886 oss GS DS Output Capacitance C V = 0 V V = 400 V, f = 1.0 MHz 27 oss GS DS c Effective Output Capacitance C eff. V = 0 V V = 0 V to 400 V 39 oss GS DS Total Gate Charge Q -- 24 g I = 5.0 A, V = 400 V, D DS Gate-Source Charge Q --V = 10 V 6.3 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --11 gd Turn-On Delay Time t -10 - d(on) Rise Time t -21 - r V = 250 V, I = 5.0 A, DD D ns Turn-Off Delay Time t -21- b d(off) R = 14 , R = 49 , see fig. 10 g D Fall Time t -15- f Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 5.0 S showing the A G integral reverse a Pulsed Diode Forward Current I -- 20 SM S p - n junction diode b Body Diode Voltage V -- SD T = 25 C, I = 5.0 A, V = 0 V 1.5 V J S GS Body Diode Reverse Recovery Time t - 430 650 ns rr b T = 25 C, I = 5.0 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q - 1.62 2.4 C rr Forward Turn-On Time t on Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. c. C eff. is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V . oss oss DS DS www.vishay.com Document Number: 91061 2 S11-0507-Rev. C, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000