GBUE2560 www.vishay.com Vishay General Semiconductor Low V Single-Phase Single In-Line Bridge Rectifier F FEATURES UL recognition file number E312394 Oxide planar chip junction Low forward voltage drop Solder dip 275 C max. 10 s, per JESD 22-B106 Ideal for printed circuit boards + High surge current capability ~~ - ~ ~ + ~~ High case dielectric strength of 1500 V RMS - Case Style GBU Material categorization: for definitions of compliance Case Style GBU please see www.vishay.com/doc 99912 TYPICAL APPLICATIONS General purpose use in AC/DC bridge full wave rectification for switching power supply, home applications, and PRIMARY CHARACTERISTICS white-goods applications specially or telecom power I 25 A supply, high efficiency desktop PC and server SMPS. F(AV) V 600 V RRM MECHANICAL DATA I 350 A FSM Case: GBU V at I = 12.5 A (125 C) 0.75 V F F Molding compound meets UL 94 V-0 flammability rating T max. 175 C J Base P/N-M3 - halogen-free, RoHS-compliant, and Package GBU industrial grade Circuit configuration In-line Terminals: matte tin plated leads, solderable per J-STD-002 and JESD22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: as marked on body Mounting Torque: 10 cm-kg (8.8 inches-lbs) max. Recommended Torque: 5.7 cm-kg (5 inches-lbs) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL GBUE2560 UNIT Device marking code GBUE2560 Maximum repetitive peak reverse voltage V 600 V RRM Maximum RMS voltage V 420 V RMS Maximum DC blocking voltage V 600 V DC (1) T = 140 C I 25 C O Maximum average forward rectified output current at A (2) T = 25 C I 4.9 A O Non-repetitive peak forward surge current 350 A I FSM 8.3 ms single sine-wave, T = 25 C J 2 2 Rating for fusing (t < 8.3 ms) It 508 A s Operating junction and storage temperature range T , T -55 to +175 C J STG Notes (1) Unit case mounted on aIuminum plate heatsink (2) Units mounted on PCB without heatsink Revision: 18-Oct-17 Document Number: 87633 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 GBUE2560 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT T = 25 C 0.88 0.92 A Maximum instantaneous forward voltage drop (1) I = 12.5 A V V F F per diode T = 125 C 0.75 - A T = 25 C 0.1 10 A Maximum DC reverse current at rated DC (2) V = 600 V I A R R blocking voltage per diode T = 125 C 27 - A Typical reverse recovery time I = 0.5 A, I =1.0 A, I = 0.25 A t 280 - ns F R rr rr Typical junction capacitance per diode 4.0 V, 1 MHz C 240 - pF J Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL GBUE2560 UNIT (1) R 23 JA Typical thermal resistance C/W (2) R 1.2 JC Notes (1) Without heatsink, free air (2) With heatsink ORDERING INFORMATION PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE GBUE2560-M3/P 3.83 P 20 Tube RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 30 14.0 D = 0.8 12.0 D = 0.5 25 D = 0.3 10.0 T measured at device bottom C D = 0.2 20 D = 0.1 8.0 D = 1.0 15 6.0 10 T 4.0 5 2.0 D = t /T t p p 0 0.0 0 255075 100 125 150 175 02468 10 12 14 Average Forward Current (A) Case Temperature (C) Fig. 1 - Derating Curve Output Rectified Current Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Revision: 18-Oct-17 Document Number: 87633 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Output Current (A) Average Power Loss (W)