SSM6P39TU TOSHIBA Field-Effect Transistor Silicon P Channel MOS Type SSM6P39TU Unit: mm Power Management Switch Applications 2.10.1 High-Speed Switching Applications 1.70.1 1 6 1.8 V drive 2 5 P-ch 2-in-1 Low ON-resistance: R = 430m (max) ( V = 1.8 V) on GS 3 4 R = 294m (max) ( V = 2.5 V) on GS R = 213m (max) ( V = 4.0 V) on GS Absolute Maximum Ratings (Ta = 25 C) (Q1,Q2 Common) (Note) 1.Source1 4.Source2 Characteristic Symbol Rating Unit 2.Gate1 5.Gate2 3.Drain2 6.Drain1 Drain-source voltage V -20 V DSS UF6 Gate-source voltage V 8 V GSS DC I -1.5 JEDEC D Drain current A Pulse I -3 DP JEITA Drain power dissipation P (Note 1) 500 mW D TOSHIBA 2-2T1B Channel temperature T 150 C ch Weight: 7.0mg (typ.) Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: Mounted on an FR4 board. (total dissipation) 2 (25.4 mm 25.4 mm 1.6 mm, Cu Pad : 645 mm ) Start of commercial production 2008-01 1 2014-03-01 2.00.1 1.30.1 0.70.05 0.65 0.65 0.1660.05 +0.1 0.3-0.05SSM6P39TU Electrical Characteristics (Ta = 25C) (Q1,Q2 Common) Characteristics Symbol Test Conditions Min Typ. Max Unit V I = -1 mA, V = 0 V -20 (BR) DSS D GS Drain-source breakdown voltage V V I = -1 mA, V = +8 V -12 (BR) DSX D GS Drain cutoff current I V = -20 V, V = 0 V -10 A DSS DS GS Gate leakage current I V = 8 V, V = 0 V 1 A GSS GS DS Gate threshold voltage V V = -3 V, I = -1 mA -0.3 -1.0 V th DS D Forward transfer admittance Y V = -3 V, I = -1 A (Note 2) 1.6 3.2 S fs DS D I = -1.0 A, V = -4 V (Note 2) 160 213 D GS Drain-source ON-resistance R m I = -0.8 A, V = -2.5 V (Note 2) 210 294 DS (ON) D GS I = -0.1 A, V = -1.8 V (Note 2) 280 430 D GS Input capacitance C 250 iss Output capacitance C V = -10 V, V = 0 V, f = 1 MHz 43 pF oss DS GS Reverse transfer capacitance C 35 rss Total Gate Charge Q 6.4 g GateSource Charge Q V = -10 V, I = -1.5 A, V = -4 V 4.5 nC DS D GS gs GateDrain Charge Q 1.9 gd Turn-on time t 12 on V = -10 V, I = -1 A, DD D Switching time ns V = 0 to -2.5 V, R = 4.7 Turn-off time t GS G 11.2 off Drain-source forward voltage V I = 1.5 A, V = 0 V (Note 2) 0.88 1.2 V DSF D GS Note 2: Pulse test 2 2014-03-01