SSM6N37FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N37FU High Speed Switching Applications Analog Switch Applications Unit: mm 1.5V drive Low ON-resistance R = 5.60 (max) ( V = 1.5 V) DS(ON) GS R = 4.05 (max) ( V = 1.8 V) DS(ON) GS R = 3.02 (max) ( V = 2.5 V) DS(ON) GS R = 2.20 (max) ( V = 4.5 V) DS(ON) GS Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain-Source voltage V 20 V DSS Gate-Source voltage V 10 V GSS DC I 250 D Drain current mA Pulse I 500 DP Power dissipation P (Note1) 300 mW D JEDEC Channel temperature T 150 C ch JEITA Storage temperature range T 55 to 150 C stg TOSHIBA 2-2J1C Note: Using continuously under heavy loads (e.g. the application of Weight: 6.8 mg(typ.) high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating Mounted on FR4 board 2 (25.4 mm 25.4 mm 1.6 mm, Cu Pad: 0.32mm 6) 0.4 mm Marking(top view) Equivalent Circuit (top view) 6 5 4 6 5 4 Q1 SU Q2 Start of commercial production 1 2 3 1 2 3 2010-11 1 2014-03-01 0.8 mm SSM6N37FU Electrical Characteristics (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol Test Condition Min Typ. Max Unit V I = 1 mA, V = 0 V 20 (BR) DSS D GS Drain-source breakdown voltage V V I = 1 mA, V = -10 V 12 (BR) DSX D GS Drain cut-off current I V = 20 V, V = 0 V 1 A DSS DS GS Gate leakage current I V = 10 V, V = 0 V 1 A GSS GS DS Gate threshold voltage V V = 3 V, I = 1 mA 0.35 1.0 V th DS D Forward transfer admittance Y V = 3 V, I = 100 mA (Note2) 0.14 0.28 S fs DS D I = 100 mA, V = 4.5 V (Note2) 1.65 2.20 D GS I = 50 mA, V = 2.5 V (Note2) 2.16 3.02 D GS Drain-source ON-resistance R DS (ON) I = 20 mA, V = 1.8 V (Note2) 2.66 4.05 D GS I = 10 mA, V = 1.5 V (Note2) 3.07 5.60 D GS Input capacitance C 12 iss Output capacitance C V = 10 V, V = 0 V, f = 1 MHz 5.5 pF oss DS GS Reverse transfer capacitance C 4.1 rss Turn-on time t 18 on V = 10 V, I = 100 mA DD D Switching time ns V = 0 to 2.5 V, R = 50 GS G Turn-off time t 36 off Drain-Source forward voltage V I = -250 mA, V = 0 V (Note2) -0.9 -1.2 V DSF D GS Note2: Pulse test Switching Time Test Circuit (a) Test Circuit (b) V IN 2.5 V 90% V = 10 V DD 2.5 V OUT R = 50 G 10% IN 0 V Duty 1% 0 V V : t , t < 5 ns IN r f V DD Common source (c) V OUT 90% 10 s Ta = 25C 10% V DD V DS (ON) t t r f t t on off Precaution Let V be the voltage applied between gate and source that causes the drain current (I ) to be low (1mA for the th D SSM6N37FU). Then, for normal switching operation, V must be higher than V and V must be lower than GS(on) th, GS(off) V This relationship can be expressed as: V < V < V th. GS(off) th GS(on). Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. Thermal resistance R and power dissipation P vary depending on board material, board area, board thickness th (ch-a) D and pad area. When using this device, please take heat dissipation into consideration 2 2014-03-01 R G