SSM3J35AFS MOSFETs Silicon P-Channel MOS SSM3J35AFS 1. Applications Analog Switches 2. Features (1) 1.2 V drive (2) Low drain-source on-resistance : R = 3.2 (typ.) ( V = -1.2 V) DS(ON) GS R = 2.3 (typ.) ( V = -1.5 V) DS(ON) GS R = 2.0 (typ.) ( V = -1.8 V) DS(ON) GS R = 1.5 (typ.) ( V = -2.5 V) DS(ON) GS R = 1.1 (typ.) ( V = -4.5 V) DS(ON) GS 3. Packaging and Internal Circuit 1: Gate 2: Source 3: Drain SSM Start of commercial production 2017-03 2017-2021 2021-02-01 1 Toshiba Electronic Devices & Storage Corporation Rev.3.0SSM3J35AFS 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 ) a Characteristics Symbol Rating Unit Drain-source voltage V -20 V DSS Gate-source voltage V 10 GSS Drain current (DC) (Note 1) I -250 mA D Drain current (pulsed) (Note 1) I -600 DP Power dissipation (Note 2) P 150 mW D Power dissipation (Note 3) 500 Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: Mounted on an FR4 board (25.4 mm 25.4 mm 1.6 mm, Cu pad: 0.36 mm2 3) Note 3: Mounted on an FR4 board (25.4 mm 25.4 mm 1.6 mm, Cu pad: 645 mm2) Note: This transistor is sensitive to electrostatic discharge and should be handled with care. Note: The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables, operators, soldering irons and other objects should be protected against anti-static discharge. Note: The channel-to-ambient thermal resistance, R , and the drain power dissipation, P , vary according to th(ch-a) D the board material, board area, board thickness and pad area. When using this device, be sure to take heat dissipation fully into account. 5. Electrostatic Discharge Test (T =25 ) a Apply voltage Failure Test conditions 2000 V 0/10 pcs C = 100 pF, R = 1.5 k (JEITA ED-4701) Note: Conducted Electrostatic Discharge Test based on JEITA ED-4701 standard, and confirmed above result. 2017-2021 2021-02-01 2 Toshiba Electronic Devices & Storage Corporation Rev.3.0