SSM3J328R TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS) SSM3J328R Power Management Switch Applications Unit: mm +0.08 1.5-V drive 0.42 +0.08 -0.05 0.17 0.05 M A -0.07 Low ON-resistance: R = 88.4m (max) ( V = -1.5 V) DS(ON) GS 3 R = 56.0m (max) ( V = -1.8 V) DS(ON) GS R = 39.7m (max) ( V = -2.5 V) DS(ON) GS R = 29.8m (max) ( V = -4.5 V) DS(ON) GS 1 2 Absolute Maximum Ratings (Ta = 25C) 0.95 0.95 Characteristic Symbol Rating Unit 2.90.2 A Drain-source voltage V -20 V DSS Gate-source voltage V 8 V GSS DC I (Note 1) -6.0 D Drain current A Pulse I (Note 1,2) -24.0 DP 1: Gate P (Note 3) 1 D Power dissipation W 2: Source t = 10s 2 3: Drain Channel temperature T 150 C ch SOT-23F Storage temperature range T 55 to 150 C stg JEDEC Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEITA temperature, etc.) may cause this product to decrease in the TOSHIBA 2-3Z1A reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the Weight: 11 mg (typ.) absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: The channel temperature should not exceed 150C during use. Note 2: PW10s,Duty1 Note 3: Mounted on a FR4 board. 2 (25.4 mm 25.4 mm 1.6 mm, Cu Pad: 645 mm ) Marking Equivalent Circuit (Top view) 3 3 KFH 1 2 1 2 1 2010-11-11 1.80.1 2.40.1 +0.08 0.8 -0.05SSM3J328R Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Conditions Min Typ. Max Unit V I = -1 mA, V = 0 V -20 V (BR) DSS D GS Drain-source breakdown voltage V I = -1 mA, V = 5 V (Note 5) -15 V (BR) DSX D GS Drain cut-off current I V = -20 V, V = 0 V -1 A DSS DS GS Gate leakage current I V = 8 V, V = 0 V 1 A GSS GS DS Gate threshold voltage V V = -3 V, I = -1 mA -0.3 -1.0 V th DS D Forward transfer admittance Y V = -3 V, I = -1.0 A (Note 4) 4.5 9.1 S fs DS D I = -3.0 A, V = -4.5 V (Note 4) 24.9 29.8 D GS I = -2.5 A, V = -2.5 V (Note 4) 31.1 39.7 D GS Drainsource ON-resistance R m DS (ON) I = -1.5 A, V = -1.8 V (Note 4) 38.8 56.0 D GS I = -0.5 A, V = -1.5 V (Note 4) 47.4 88.4 D GS Input capacitance C 840 iss V = -10 V, V = 0 V DS GS pF Output capacitance C 118 oss f = 1 MHz Reverse transfer capacitance C 99 rss Total gate charge Q 12.8 g V = -10 V, I = -4.0 A, DD DS Gate-source charge Q 1.4 nC gs1 V = -4.5 V GS Gate-drain charge Q 3.0 gd Turn-on time t V = -10 V, I = -2.0 A 32 on DD D Switching time ns Turn-off time t V = 0 to -2.5 V, R = 4.7 107 GS G off Drain-Source forward voltage V I = 6.0 A, V = 0 V (Note 4) 0.87 1.2 V DSF D GS Note4: Pulse test Note5: If a forward bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drain-source breakdown voltage is lowered in this mode. Switching Time Test Circuit (a) Test Circuit 0 V (b) V IN 90% OUT 0 IN 10% 2.5 V 2.5V R L (c) V OUT V DS (ON) 90% 10 s V DD V = -10 V DD 10% R = 4.7 G V DD t t r f Duty 1% V : t , t < 5 ns IN r f t t on off Common Source Ta = 25C Notice on Usage Let V be the voltage applied between gate and source that causes the drain current (I ) to be low (-1 mA for the th D SSM3J328R). Then, for normal switching operation, V must be higher than V and V must be lower than GS(on) th, GS(off) V This relationship can be expressed as: V < V < V . th. GS(off) th GS(on) Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. Thermal resistance R and power dissipation P vary depending on board material, board area, board thickness th (ch-a) D and pad area. When using this device, please take heat dissipation into consideration. 2 2010-11-11 R G