SSM3J117TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J117TU DC-DC converter Applications High-Speed Switching Applications Unit: mm 4 V drive 2.10.1 Low ON-resistance: R = 225 m (max) ( V = 4 V) DS(ON) GS 1.70.1 R = 117 m (max) ( V = 10 V) DS(ON) GS Absolute Maximum Ratings (Ta = 25C) 1 Characteristic Symbol Rating Unit 3 2 Drainsource voltage V 30 V DS Gatesource voltage V 20 V GSS DC I 2 D Drain current A Pulse I 4 DP P 800 D (Note 1) Power dissipation mW P 500 D (Note 2) Channel temperature T 150 C ch 1: Gate Storage temperature range T 55 to 150 C stg 2: Source Note: Using continuously under heavy loads (e.g. the application of 3: Drain high temperature/current/voltage and the significant change in UFM temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. JEDEC operating temperature/current/voltage, etc.) are within the JEITA absolute maximum ratings. Please design the appropriate reliability upon reviewing the TOSHIBA 2-2U1A Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual Weight: 6.6 mg (typ.) reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on a ceramic board. 2 (25.4 mm 25.4 mm 0.8 t, Cu Pad: 645 mm ) Note 2: Mounted on an FR4 board. 2 (25.4 mm 25.4 mm 1.6 t, Cu Pad: 645 mm ) Marking Equivalent Circuit (top view) 3 3 JJ9 1 2 1 2 Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. Start of commercial production 2005-12 1 2015/01/20 2.00.1 0.650.05 0.70.05 0.1660.05 +0.1 0.3 -0.05SSM3J117TU Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit V I = 1 mA, V = 0 V 30 (BR) DSS D GS Drainsource breakdown voltage V V I = 1 mA, V = +20 V 15 (BR) DSX D GS Drain cutoff current I V = 30 V, V = 0 V 1 A DSS DS GS Gate leakage current I V = 16 V, V = 0 V 1 A GSS GS DS Gate threshold voltage V V = 5 V, I = 1 mA 1.2 2.6 V th DS D Forward transfer admittance Y V = 5 V, I = 1 A (Note 3) 1.6 3.1 S fs DS D I = 1 A, V = 10 V (Note 3) 80 117 D GS Drainsource ON-resistance R m DS (ON) I = 0.5 A, V = 4 V (Note 3) 160 225 D GS Input capacitance C V = 15 V, V = 0 V, f = 1 MHz 280 pF iss DS GS pF Output capacitance C V = 15 V, V = 0 V, f = 1 MHz 80 oss DS GS Reverse transfer capacitance C V = 15 V, V = 0 V, f = 1 MHz 45 pF rss DS GS Turn-on time t V = 15 V, I = 1 A, 16 on DD D Switching time ns V = 0 to 4 V, R = 10 Turn-off time t 35 GS G off Drainsource forward voltage V I = 2 A, V = 0 V (Note 3) 0.8 1.2 V DSF D GS Note 3: Pulse test Switching Time Test Circuit (a) Test circuit (b) V IN 0 V OUT 10% 0 IN 90% 4 V 4 V 10 s V DD (c) V V OUT DS (ON) 90% V = -15 V DD R = 10 G 10% Duty 1 % V DD t t r f V : t , t < 5 ns IN r f Common Source t t on off Ta = 25C Precaution V can be expressed as the voltage between gate and source when the low operating current value is I = 1 mA for th D this product. For normal switching operation, V requires a higher voltage than V and V requires a lower GS (on) th GS (off) voltage than V th. (The relationship can be established as follows: V < V < V ) GS (off) th GS (on). Take this into consideration when using the device. 2 2015/01/20 R G