XP263N1001TR-G is a general-purpose n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) manufactured by Torex Semiconductor. It is a 90nm process, with a SOT-23 package, and has a maximum drain-source voltage of 60V and a gate-source voltage of 10V. It has an on-state resistance of 4.1W and a current rating of 0.1A. It provides a fast switching speed, low gate drive power and low ON-state resistance. The device is suitable for a wide range of applications, such as portable products, LED drivers, power supplies, general logic, motor and relay drivers.