eGaN FET DATASHEET EPC2007C EPC2007C Enhancement Mode Power Transistor D V , 100 V DS EFFICIENT POWER CONVERSION G R , 30 m DS(on) I , 6 A HAL D S Gallium Nitrides exceptionally high electron mobility and low temperature coefficient allows very low R , while its lateral device structure and majority carrier diode provide exceptionally low Q DS(on) G and zero Q . The end result is a device that can handle tasks where very high switching frequency, RR and low on-time are beneficial as well as those where on-state losses dominate. EPC2007C eGaN FETs are supplied only in Maximum Ratings passivated die form with solder bumps PARAMETER VALUE UNIT V Drain-to-Source Voltage (Continuous) 100 V Applications DS High Speed DC-DC conversion Continuous (T = 25C, R = 62C/W) 6 A JA I A Class-D Audio D Pulsed (25C, T = 300 s) 40 PULSE Wireless Power Transfer Gate-to-Source Voltage 6 Lidar V V GS Gate-to-Source Voltage -4 Benefits T Operating Temperature -40 to 150 J C Ultra High Efficiency T Storage Temperature -40 to 150 STG Zero Q RR Ultra Low Q G Ultra Small Footprint Thermal Characteristics PARAMETER TYP UNIT R Thermal Resistance, Junction-to-Case 3.6 JC R Thermal Resistance, Junction-to-Board 9.3 C/W JB R Thermal Resistance, Junction-to-Ambient (Note 1) 80 JA Note 1: R is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. JA See eGaN FET DATASHEET EPC2007C Dynamic Characteristics (T = 25C unless otherwise stated) J PARAMETER TEST CONDITIONS MIN TYP MAX UNIT C Input Capacitance 170 220 ISS C Reverse Transfer Capacitance V = 50 V, V = 0 V 1.9 2.7 pF RSS DS GS C Output Capacitance 110 165 OSS R Gate Resistance 0.4 G Q Total Gate Charge V = 50 V, V = 5 V, I = 6 A 1.6 2.2 G DS GS D Q Gate-to-Source Charge 0.6 GS Q Gate-to-Drain Charge V = 50 V, I = 6 A 0.3 0.6 GD DS D nC Q Gate Charge at Threshold 0.4 G(TH) Q Output Charge V = 50 V, V = 0 V 8.3 12.5 OSS DS GS Q Source-Drain Recovery Charge 0 RR All measurements were done with substrate connected to source. Note 2: C is a fixed capacitance that gives the same stored energy as C while V is rising from 0 to 50% BV . OSS(ER) OSS DS DSS Note 3: C is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 50% BV . OSS(TR) OSS DS DSS Figure 1: Typical Output Characteristics at 25 C Figure 2: Transfer Characteristics 40 35 V = 5 V GS V = 4 V GS 30 V = 3 V GS V = 2 V GS 25 25C 125C 20 V = 3 V DS 15 10 5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 V Drain-to-Source Voltage (V) V Gate-to-Source Voltage (V) DS GS Figure 3: R vs. V for Various Drain Currents Figure 4: R vs. V for Various Temperatures DS(on) GS DS(on) GS 100 I = 3 A D I = 6 A D 80 I = 9 A D I = 12 A D 60 25C 125C 40 I = 6 A D 20 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 V Gate-to-Source Voltage (V) V Gate-to-Source Voltage (V) GS GS EPC THE LEADER IN GaN TECHNOLOGY WWW.EPC-CO.COM COPYRIGHT 2019 2 40 35 30 25 20 15 10 5 0 100 80 60 40 20 0 I Drain Current (A) R Drain-to-Source Resistance (m) D DS(on) I Drain Current (A) R Drain-to-Source Resistance (m ) D DS(on)