TMMBAT42FILM STMicroelectronics

TMMBAT42 - TMMBAT43 Small signal Schottky diodes Datasheet - production data Description General purpose metal to silicon diode featuring very low turn-on voltage and fast switching. These devices have integrated protection against excessive voltage such as electrostatic discharges. 0,1,0(/) Features Very small conduction losses Negligible switching losses Low forward voltage drop July 2015 DocID3497 Rev 3 1/7 This is information on a product in full production. www.st.comCharacteristics TMMBAT42 - TMMBAT43 1 Characteristics Table 1. Absolute maximum ratings at 25 C unless otherwise specified Symbol Parameter Value Unit V Repetitive peak reverse voltage 30 V RRM I Forward continuous current Tl = 25 C 200 mA F t 1 s p I Repetitive peak forward current 500 mA FRM 0.5 I Surge non repetitive forward current t = 10 ms 4 A FSM p P Power dissipation Tl = 65 C 200 mW tot T Storage temperature range -65 to + 150 C stg T Operating junction temperature range -65 to + 125 C j T Maximum temperature for soldering during 15 s 260 C L Table 2. Thermal resistance Symbol Parameter Value Unit R Junction to leads 300 C/W th(j-l) Table 3. Static electrical characteristics Symbol Test conditions Min. Typ. Max. Unit V T = 25 C I 100 A 30 - V BR j R = T = 25 C I = 200 mA All types - 1 j F T = 25 C I =10 mA -0.4 j F TMMBAT42FILM (1) V T = 25 C I = 50 mA - 0.65 V F j F T = 25 C I = 2 mA 0.26 - 0.33 j F TMMBAT43FILM T = 25 C I =15 mA - 0.45 j F T = 25 C, V = 25 V - 0.5 j R (1) I A R T = 100 C, V = 25 V - 100 j R 1. Pulse test: t = 380 s < 2% p Table 4. Dynamic characteristics Symbol Test conditions Min. Typ. Max. Unit CT = 25 C V 1 V f = 1 MHz 7 pF j R = T = 25 C I =10 mA I = 10 mA I = 1 mA j F R RR t 5ns rr R = 100 L 2/7 DocID3497 Rev 3