STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60N N-channel 600 V, 0.168 typ., 17 A MDmesh II Power MOSFETs in TO-220FP, IPAK, TO-220 and TO-247 packages Datasheet production data Features TAB Order codes V Tjmax R max. I DS DS(on) D STF24NM60N 3 3 2 2 1 1 2 STI24NM60N I PAK TO-220FP 650 V 0.19 17 A STP24NM60N % STW24NM60N 100% avalanche tested 3 2 Low input capacitance and gate charge 1 Low gate input resistance TO-220 TO-247 Figure 1. Internal schematic diagram Applications Switching applications % 7 RU Description These devices are N-channel Power MOSFETs developed using the second generation of * MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is 6 therefore suitable for the most demanding high efficiency converters. 0 Y Table 1. Device summary Order code Marking Packages Packaging STF24NM60N TO-220FP 2 STI24NM60N I PAK 24NM60N Tube STP24NM60N TO-220 STW24NM60N TO-247 July 2014 DocID18047 Rev 4 1/20 This is information on a product in full production. www.st.com 7 Contents STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60N Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 4.1 TO-220FP, STF24NM60N .11 2 4.2 I PAK, STI24NM60N 13 4.3 TO-220, STP24NM60N 15 4.4 TO-247, STW24NM60N 17 5 Revision history . 19 2/20 DocID18047 Rev 4