STBR3008-Y Datasheet Automotive 800 V, 30 A bridge rectifier diode Features A1 K AEC-Q101 qualified K Ultra low conduction losses Ultra-low reverse losses A High junction temperature capability (+175 C) A A NC V guaranteed from -40 to +175 C RRM K DPAK HV 2 D PAK HV creepage distance (anode to cathode) = 5.38 mm min. (with top DO-247 coating) PPAP capable ECOPACK2 compliant for DO-247 2 ECOPACK1 compliant for D PAK HV Applications On board charger (OBC) Charging stations Bridge function Description The high quality design of this diode has produced a device with consistently Product status link reproducible characteristics and intrinsic ruggedness. These characteristics make it STBR3008-Y ideal for heavy duty applications that demand long term reliability like automotive applications. Product summary Thanks to its ultra-low conduction losses, the STBR3008-Y is especially suitable for use as input bridge diode in battery chargers or charging stations. Symbol Value I F(AV) 30 A V 800 V RRM T -40 to +175 C j V (typ.) 1.0 V F DS13076 - Rev 3 - June 2020 www.st.com For further information contact your local STMicroelectronics sales office.STBR3008-Y Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit V T = -40 C to +175 C Repetitive peak reverse voltage 800 V RRM j V t = 10 ms square Non-repetitive surge reverse voltage 900 V RSM p I Forward rms current 45 A F(RMS) I T = 160 C, = 0.5 square wave Average forward current 30 A F(AV) C I Surge non repetitive forward current t = 10 ms sinusoidal 350 A FSM p T Storage temperature range -65 to +175 C stg T Operating junction temperature -40 to +175 C j Table 2. Thermal parameters Typ. Symbol Parameter Unit value R Junction to case (DO-247) 0.35 C/W th(j-c) R Junction to case (DPAK HV) 0.40 C/W th(j-c) For more information, please refer to the following application note : AN5088 : Rectifiers thermal management, handling and mounting recommendations Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 2 j (1) I V = V Reverse leakage current A R R RRM T = 150 C - 10 100 j T = 25 C - 1.00 1.10 j (2) I = 30 A V Forward voltage drop V F F T = 150 C - 0.88 0.97 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses, use the following equation: 2 P = 0.75 x I + 0.0073 x I F(AV) F (RMS) For more information, please refer to the following application notes related to the power losses: AN604: Calculation of conduction losses in a power rectifier AN4021: Calculation of reverse losses in a power diode DS13076 - Rev 3 page 2/12