BD535 STMicroelectronics

BD533 BD535 BD537 BD534 BD536 Complementary power transistors . Features BD533, BD535, and BD537 are NPN transistors Description 3 The devices are manufactured in Planar 2 1 technology with Base Island layout. The resulting transistor shows exceptional high gain TO-220 performance coupled with very low saturation voltage. The PNP types are BD534 and BD536. Figure 1. Internal schematic diagrams Table 1. Device summary Order code Marking Package Packaging BD533 BD533 BD534 BD534 BD535 BD535 TO-220 Tube BD536 BD536 BD537 BD537 July 2007 Rev 4 1/11 www.st.com 11Absolute maximum ratings BD533 BD534 BD535 BD536 BD537 1 Absolute maximum ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit NPN BD533 BD535 BD537 PNP BD534 BD536 V Collector-base voltage (I = 0) 45 60 80 V CBO E V Collector-emitter voltage (V = 0) 45 60 80 V CES B V Collector-base voltage (I = 0) 45 60 80 V CEO B V Emitter-base voltage (I = 0) 5 V EBO C I Collector current 8 A C I Base current 1 A B P Total dissipation at T = 25C 50 W TOT case T Storage temperature -65 to 150 C stg T Max. operating junction temperature 150 C J Note: For PNP types voltage and current values are negative 2/11