BAT54SFILMY STMicroelectronics

BAT54-Y Automotive small signal Schottky diodes Datasheet - production data Description BAT54FILMY (single) The BAT54 series use the 40 V Schottky barrier diodes packaged in SOT-23 and SOT-323. BAT54SFILMY These devices are suitable for automotive SOT-23 (series) applications. Table 1: Device summary Symbol Value IF 300 mA BAT54WFILMY V 40 V (single) RRM C (typ.) 7 pF BAT54CWFILMY T(max.) 150 C j SOT-323 (common cathode) BAT54AWFILMY (common anode) BAT54SWFILMY (series) Configurations in top view Features AEC-Q101 qualified Low conduction and reverse losses Negligible switching losses Low forward and reverse recovery times Extremely fast switching Surface mount device Low capacitance diode PPAP capable ECOPACK 2 compliant component October 2017 DocID17696 Rev 3 1/11 www.st.com This is information on a product in full production. Characteristics BAT54-Y 1 Characteristics Table 2: Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 40 V I Continuous forward current 300 mA F IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 1 A T Storage temperature range -65 to +150 C stg (1) Operating junction temperature range Tj -40 to +150 C T Maximum soldering temperature 260 C L Notes: (1) (dP /dT ) < (1/R ) condition to avoid thermal runaway for a diode on its own heatsink. tot j th(j-a) Table 3: Thermal parameters Symbol Parameter Value Unit SOT-23 500 (1) Rth(j-a) Junction to ambient C/W SOT-323 550 Notes: (1) Epoxy printed circuit board with recommended pad layout Table 4: Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit Tj = 25 C - - 1 (1) I Reverse leakage current V = 30 V A R R T = 100 C - - 100 j IF = 0.1 mA - - 240 I = 1 mA - - 320 F (2) V F Forward voltage drop Tj = 25 C IF = 10 mA - - 400 mV I = 30 mA - - 500 F IF = 100 mA - - 900 Notes: (1) Pulse test: tp = 5 ms, < 2 % (2) Pulse test: t = 380 s, < 2% p Table 5: Dynamic characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit C Diode capacitance VR = 1 V, F = 1 MHz - 7 10 pF I = 10 mA, I = 10 mA, T = 25 C F R j trr Reverse recovery time - 5 ns I = 1 mA, R = 100 rr L 2/11 DocID17696 Rev 3