The documentation and process conversion measures INCH POUND necessary to comply with this document shall be completed by 30 November 2015. MIL-PRF-19500/317T 30 August 2015 SUPERSEDING MIL-PRF-19500/317R 27 January 2014 PERFORMANCE SPECIFICATION SHEET * TRANSISTOR, NPN, SILICON, SWITCHING, ENCAPSULATED (THROUGH-HOLE AND SURFACE MOUNT), AND UNENCAPSULATED, RADIATION HARDNESS ASSURANCE, TYPES 2N2369A, 2N3227, 2N4449, QUALITY LEVELS JAN, JANTX, JANTXV, JANS, JANHC, JANKC This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE * 1.1 Scope. This specification covers the performance requirements for NPN, silicon, high speed switching transistors (including dual devices). Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500, and two levels of product assurance are provided for each unencapsulated device type. Provisions for radiation hardness assurance (RHA) to two radiation levels (R and F) are provided for JANTXV product assurance level. Provisions for RHA to eight radiation levels are provided for JANS and JANKC. RHA level designators M, D, P, L, R, F, G, and H are appended to the device prefix to identify devices, which have passed RHA requirements. * 1.2 Package outlines and die topography. The device packages for the encapsulated (THROUGH-HOLE AND SURFACE MOUNT) device types are as follows: (2N2369A and 2N3227) (TO-18) in accordance with figure 1, (2N4449) (TO-46) in accordance with figure 2, (2N2369A 2N3227, 2N4449) (UB, UBC, and UBCN) in accordance with figure 3, (UA version) in accordance with figure 4, (U version dual devices) in accordance with figure 5, The dimensions and topography for JANHC and JANKC unencapsulated die are as follows: The A version die (for 2N2369A) in accordance with figure 6, and B version die (for 2N2369A, 2N3227) in accordance with figure 7. Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor dla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at MIL-PRF-19500/317T 1.3 Maximum ratings. Unless otherwise specified, T = +25C. A Types P V V V V T and P T = P T = T CBO EBO CEO CES J T A T C T T = +125C (1) STG +25C +125C SP W W W V dc V dc V dc V dc C 2N2369A, UA, UB, UBC, UBCN 0.36 (2) 0.36 (3)(4) 0.36 (3) 40 4.5 15 40 -65 2N4449, UA, UB, UBC, UBCN 0.36 (2) 0.36 (3)(4) 0.36 (3) 40 4.5 15 40 to 2N3227, UA, UB, UBC, UBCN 0.36 (2) 0.36 (3)(4) 0.36 (3) 40 6.0 20 40 +200 2N2369AU 0.5 (5) 40 4.5 15 40 2N4449U 0.5 (5) 40 4.5 15 40 2N3227U 0.5 (5) 40 6.0 20 40 Types R R R JA JC JSP C/W C/W C/W 2N2369A 400 150 2N4449 400 150 2N3227 400 150 2N2369AUA, UB, UBC, UBCN 486 210 2N4449UA, UB, UBC, UBCN 486 210 2N3227UA, UB, UBC, UBCN 486 210 2N2369AU 350 (6) 290 (7) 2N4449U 350 (6) 290 (7) 2N3227U 350 (6) 290 (7) (1) Applicable for UA, UB, UBC, UBCN and U packages. (2) For TO-18 and TO-46 packages derate linearly 2.06 mW/C above T = +25C. A * (3) Derate linearly 4.8 mW/C above T =+125C. See figures 8, 9, 10, 11, and 12. C (4) Power dissipation limited to 360 mW per chip regardless of thermal resistance. (5) For UA, UB, UBC, and UBCN packages mounted on FR-4 PCB (1 Oz. Cu) with contacts 20 mils larger than package pads. See figure 13. (6) One side only, derate linerly 2.857 mW/C above T = +25C. SP (7) Derate linearly 3.44 mW/C above T = +54.5C. See figure 13. A 1.4 Primary electrical characteristics. Unless otherwise specified, T = +25C. A Type h (2) h (2) V t t t FE2 FE4 h CE(sat)1 on off s FE (1) V = 0.4 V dc V = 1.0 V dc I = 10 mA dc I = 10 mA dc I = 10 mA dc I = 10 mA dc CE CE V = 10 V dc C C C C CE I = 30 mA dc I = 100 mA dc I = 1 mA dc I = 3 mA dc I = 3 mA dc I = I = C C I = 10 mA dc B B1 B1 B1 B2 C f = 100 MHz I = -1.5 mA dc I = -1.5 mA dc 10 mA dc B2 B2 Min Max Min Max Min Max V dc Max ns ns ns 2N2369A 30 120 20 120 5.0 10 0.20 12 18 13 2N3227 40 250 30 150 5.0 10 0.20 12 25 18 2N4449 30 120 20 120 5.0 10 0.20 12 18 13 (1) Electrical characteristics for the A, AU, AUBC, U, UA, UB, and UBC suffix devices are identical to the corresponding non-suffix device. (2) Pulsed (see 4.5.1). 2