US5U30TR ROHM

US5U30 2.5V Drive Pch+SBD MOSFET Datasheet llOutline SOT-353T V -20V DSS SC-113CA R (Max.) 390m DS(on) TUMT5 I 1A D P 1.0W D llInner circuit llFeatures 1) The US5U30 combines Pch MOSFET with a Schottky barrier diode in a single 2) High-speed switching, Low On-resistance 3) Low voltage drive (2.5V drive) 4) Built-in Low V schottky barrier diode F 5) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type switching Basic ordering unit (pcs) 3000 Taping code TR Marking U30 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a <MOSFET> Parameter Symbol Value Unit Drain - Source voltage V -20 V DSS V Gate - Source voltage 12 V GSS Continuous drain current I 1 A D *1 I Pulsed drain current 4 A DP Continuous source current (body diode) I -0.4 A S *1 I Pulsed source current (body diode) -4 A SP *3 P Power dissipation 0.7 W/element D Junction temperature T 150 j www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 1/10 20171117 - Rev.002 US5U30 Datasheet llAbsolute maximum ratings (T = 25C) a <Di> Parameter Symbol Value Unit V Repetitive peak reverse voltage 30 V RM V Reverse voltage 20 V R I Forward current 0.5 A F *2 I Forward current surge peak 2 A FSM *3 P Power dissipation 0.5 W/element D T Junction temperature 150 j <MOSFET + Di> Parameter Symbol Value Unit *3 P Power dissipation 1.0 W/total D T Operating junction and storage temperature range -55 to +150 stg llElectrical characteristics (T = 25C) a <MOSFET> Values Parameter Symbol Conditions Unit Min. Typ. Max. I V = 12V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS Drain - Source breakdown V V = 0V, I = -1mA -20 - - V (BR)DSS GS D voltage Zero gate voltage I V = -20V, V = 0V - - -1 A DSS DS GS drain current V V = -10V, I = -1mA Gate threshold voltage -0.7 - -2.0 V GS(th) DS D V = -4.5V, I = -1A - 280 390 GS D Static drain - source *4 R V = -4V, I = -1A - 310 430 m DS(on) GS D on - state resistance V = -2.5V, I = -0.5A - 570 800 GS D Forward Transfer *4 Y V = -10V, I = -0.5A 0.7 - - S fs DS D Admittance www.rohm.com 2/10 20171117 - Rev.002 2017 ROHM Co., Ltd. All rights reserved.