General purpose (dual transistors) EMX3 / UMX3N / IMX3 Features Dimensions (Unit : mm) Two 2SC2412AK chips in a EMT or UMT or SMT package. EMX3 ( ) (4) 3 ( ) ( ) 5 2 Inner circuits (6) (1) 1.2 1.6 EMX3 / UMX3N IMX3 (3) (2) (1) (4) (5) (6) Tr2 Tr2 Tr1 Tr1 ROHM : EMT6 Each lead has same dimensions (4) (5) (6) (3) (2) (1) UMX3N Package, marking, and packaging specifications Type EMX3 UMX3N IMX3 1.25 Package EMT6 UMT6 SMT6 2.1 Marking X3 X3 X3 Code T2R TR T108 0.1Min. Basic ordering unit (pieces) 8000 3000 3000 ROHM : UMT6 Each lead has same dimensions EIAJ : SC-88 Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V IMX3 Emitter-base voltage VEBO 7 V Collector current IC 150 mA EEMX3 / UMX3N 1 150(TOTAL) Collector power PC mW dissipation IMX3 300(TOTAL) 2 Junction temperature Tj 150 C 1.6 Storage temperature Tstg 55 to +150 C 2.8 1 120mW per element must not be exceeded. 2 200mW per element must not be exceeded. 0.3Min. ROHM : SMT6 Each lead has same dimensions EIAJ : SC-74 Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 60 V IC=50A Collector-emitter breakdown voltage BVCEO 50 V IC=1mA Emitter-base breakdown voltage BVEBO 7 V IE=50A Collector cutoff current ICBO 0.1 A VCB=60V Emitter cutoff current IEBO 0.1 A VEB=7V Collector-emitter saturation voltage VCE(sat) 0.4 V IC/IB=50mA/5mA DC current transfer ratio hFE 120 560 VCE=6V, IC=1mA Transition frequency fT 180 MHz VCE=12V, IE=2mA, f=100MHz Output capacitance Cob 2 3.5 pF VCB=12V, IE=0mA, f=1MHz Transition frequency of the device. www.rohm.com 2011.12 - Rev.B 1/3 c 2011 ROHM Co., Ltd. All rights reserved. 0.15 0.3 0.2 0.15 0.13 0.22 ( ) ( ) ( ) (5) 4 5 6 (6) (4) 0~0.1 0~0.1 (3) (2) (1) ( ) ( ) 1 3 ( ) 2 0.5 0.5 0.8 0.95 0.95 1.0 0.7 0.65 0.65 1.9 0.5 1.6 1.1 2.9 0.9 1.3 2.0 EMX3 / UMX3N / IMX3 Data Sheet Electrical characteristics curves 0.50mA 100 50 10 Ta=25C 30A VCE=6V Ta=25C 27A 20 80 8 24A 0.30mA 10 21A 0.25mA 5 60 6 18A 0.20mA 15A 2 0.15mA 40 12A 4 1 9A 0.10mA 0.5 6A 20 2 0.05mA 3A 0.2 IB=0A 0 IB=0A 0.1 0 0 0.4 0.8 1.2 1.6 2.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 4 8 12 16 20 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Grounded emitter propagation Fig.2 Grounded emitter output Fig.3 Grounded emitter output characteristics ( ) characteristics ( ) characteristics 500 500 0.5 VCE=5V Ta=25C Ta=25C Ta=100C 25C 0.2 VCE=5V 200 200 3V 55C IC/IB=50 1V 20 0.1 100 100 10 0.05 50 50 0.02 20 20 0.01 10 10 0.2 0.5 1 2 5 10 20 50 100 200 0.2 0.5 1 2 5 10 20 50 100 200 0.2 0.5 1 2 5 10 20 50 100 200 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. Fig.5 DC current gain vs. Fig. 6 Collector-emitter saturation collector current ( ) collector current ( ) voltage vs. collector current 0.5 0.5 IC/IB=10 IC/IB=50 Ta=25C VCE=6V 500 0.2 Ta=100C 0.2 25C 55C Ta=100C 0.1 0.1 25C 55C 200 0.05 0.05 0.02 100 0.02 0.01 0.01 50 0.2 0.5 1 2 5 10 20 50 100 200 0.2 0.5 1 2 5 10 20 50 100 0.5 1 2 5 10 20 50 100 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) Fig.7 Collector-emitter saturation Fig.8 Collector-emitter saturation Fig.9 Gain bandwidth product vs. voltage vs. collector current ( ) voltage vs. collector current () emitter current www.rohm.com 2011.12 - Rev.B 2/3 c 2011 ROHM Co., Ltd. All rights reserved. 0.35mA 0.40mA 0.45mA 25C 55C Ta=100C DC CURRENT GAIN : hFE COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR CURRENT : IC (mA) DC CURRENT GAIN : hFE COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR CURRENT : IC (mA) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) TRANSITION FREQUENCY : fT (MHz) COLLECTOR CURRENT : IC (mA)