X-On Electronics has gained recognition as a prominent supplier of TT8J21TR MOSFETs across the USA, India, Europe, Australia, and various other global locations. TT8J21TR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TT8J21TR ROHM

Hot TT8J21TR electronic component of ROHM
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See Product Specifications
Part No.TT8J21TR
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET P Chan-20V-2.5A Mid-PowerSwitching
Datasheet: TT8J21TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)
311: AUD 0.4897 ( AUD 0.54 Inc GST) ea
Line Total: AUD 152.2967 ( AUD 167.53 Inc GST) 
Availability - 2910
Ship by Fri. 11 Oct to Thu. 17 Oct
MOQ: 311  Multiples: 1
Pack Size: 1
Availability Price Quantity
1385
Ship by Thu. 17 Oct to Mon. 21 Oct
MOQ : 1
Multiples : 1
1 : AUD 1.5379
10 : AUD 1.1981
100 : AUD 0.8239
500 : AUD 0.6883
1000 : AUD 0.6196
3000 : AUD 0.5235
24000 : AUD 0.5218

2910
Ship by Fri. 11 Oct to Thu. 17 Oct
MOQ : 311
Multiples : 1
311 : AUD 0.4897
500 : AUD 0.4721
1000 : AUD 0.4566
2500 : AUD 0.4432

2735
Ship by Fri. 11 Oct to Thu. 17 Oct
MOQ : 30
Multiples : 1
30 : AUD 2.0519
50 : AUD 1.7851
100 : AUD 1.2369
200 : AUD 1.2321
500 : AUD 1.0332
1000 : AUD 0.8805

   
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RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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We are delighted to provide the TT8J21TR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TT8J21TR and other electronic components in the MOSFETs category and beyond.

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TT8J21 Datasheet -20V Pch + Pch Middle Power MOSFET llOutline TSST8 V -20V DSS R (Max.) 68m DS(on) I 2.5A D P 1.25W D llFeatures llInner circuit 1) Low on - resistance. 2) -1.5V Drive. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (TSST8). 5) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 180 Switching Tape width (mm) 8 Type Basic ordering unit (pcs) 3000 Taping code TR Marking J21 llAbsolute maximum ratings (T = 25C) <It is the same ratings for the Tr1 and Tr2> a Parameter Symbol Value Unit V Drain - Source voltage -20 V DSS Continuous drain current I 2.5 A D *1 I Pulsed drain current 10 A D,pulse V Gate - Source voltage 10 V GSS total 1.25 *2 P D Power dissipation element 1.0 W *3 P total 0.6 D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 1/11 20150730 - Rev.001 TT8J21 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. total - - 100 *2 R thJA Thermal resistance, junction - ambient element - - 125 /W *3 R total - - 208 thJA llElectrical characteristics (T = 25C) <It is the same characteristics for the Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -20 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -21.9 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -20V, V = 0V - - -1 A DSS DS GS drain current Gate - Source I V = 0V, V = 10V - - 10 A GSS DS GS leakage current Gate threshold V V = -10V, I = -1mA -0.3 - -1.0 V GS(th) DS D voltage V I = -1mA GS(th) D Gate threshold voltage - 2.4 - mV/ temperature coefficient T referenced to 25 j V = -4.5V, I = -2.5A - 49 68 GS D V = -2.5V, I = -1.2A - 68 95 GS D Static drain - source *4 R m DS(on) on - state resistance V = -1.8V, I = -1.2A - 100 150 GS D V = -1.5V, I = -0.5A - 140 280 GS D R Gate input resistance f = 1MHz, open drain - 12 - G Forward Transfer *4 Y V = -10V, I = -2.5A 2.5 - - S fs DS D Admittance www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2/11 20150730 - Rev.001

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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