RSA6.1U5T108 ROHM

RSA6.1U5 Diodes ESD Protection diode RSA6.1U5 z Application z External dimensions (Unit : mm) z Lead size figure (Unit : mm) ESD Protection 19 2.90.2 0.150.1 0.30.1 Each lead has same dimension 0.95 0.95 0.06 0.05 (4) (5) (6) z Features 0.6 1) Small mold type. (SMD6) 0.45 0.35 0.35 0.45 2) High reliability. 00.1 0.8MIN. SMD6 (3) (2) (1) 1.90.2 0.80.1 0.95 0.95 1.10.2 0.1 zConstruction Silicon epitaxial planar z Structure ROHM : SMD6 JEDEC :S0T-457 JEITA : SC-74 week code 1Pin Mark z Taping dimensions (Unit : mm) 1.550.1 4.00.1 2.00.05 0 0.30.1 1.05MIN 3.20.1 4.00.1 1.350.1 z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Power dissipation Pm200W Peak Pulse Power-1(tp=101000us) 30 Ppk mW Peak Pulse Power-2(tp=101000us) Ppk 200 mW Junction temperature 150 Tj Storage temperature -55 to +150 Tstg z Electrical characteristics (Ta=25C) Parameter Conditions Symbol Min. Typ. Max. Unit Zener voltage V 6.1 - 7.2 V I =1mA z Z Reverse current I -- 1 A V =3.0V R R Forward current V - - 1.25 V IF=200mA Junction capacitance Ct - - 200 pF V =0V , f=1MHz R Rev.B 1/2 0.2 1.6 0.1 2.80.2 0.30.6 3.20.1 00.5 5.50.2 1.0MIN. 3.50.05 1.750.1 8.00.2 3.20.1 2.4RSA6.1U5 Diodes z Electrical characteristic curves (Ta=25C) 1000 10 10000 f=1MHz 1000 Ta=150 Ta=125 Ta=25 100 1 Ta=75 10 Ta=125 Ta=75 1 Ta=-25 0.1 100 Ta=150 0.1 Ta=25 0.01 0.01 Ta=-25 0.001 0.0001 0.001 10 0.00001 66.5 7 7.5 8 00.5 11.5 22.5 33.5 44.5 5 00.5 11.5 2 2.5 3 ZENER VOLTAGE:Vz(V) REVERSE VOLTAGEVR(V) REVERSE VOLTAGE:VR(V) Vz-Iz CHARACTERISTICS VR-IR CHARACTERISTICS VR-Ct CHARACTERISTICS 0.2 150 6.9 Ta=25 Ta=25 0.18 Ta=25 140 VR=3V f=1MHz IZ=1mA 0.16 n=30pcs 130 6.8 VR=0V n=30pcs n=10pcs 0.14 120 0.12 110 6.7 0.1 100 0.08 90 6.6 AVE:0.0190nA 0.06 80 0.04 70 6.5 AVE:91.1pF AVE:6.736V 0.02 60 0 50 6.4 Vz DISRESION MAP Ct DISRESION MAP IR DISRESION MAP 1000 30 No break at 30kV No break at 30kV Rth(j-a) 25 100 20 Rth(j-c) 15 Mounted on epoxy board IM=10mA IF=100mA 10 10 5 time 1ms C=150pF C=100pF 300us R=330 R=1.5k 1 0 0.001 0.01 0.1 1 10 100 1000 ESD DISPERSION MAP TIME:t(s) Rth-t CHARACTERISTICS Rev.B 2/2 TRANSIENT ZENER VOLTAGE:Vz() THAERMAL IMPEDANCE:Rth (/W) ZENER CURRENT:Iz(mA) REVERSE CURRENT:IR (nA) REVERSE CURRENT:IR(nA) ELECTROSTATIC DISCHARGE TEST ESD(KV) CAPACITANCE CAPACITANCE BETWEEN BETWEENTERMINALS:Ct(pF) TERMINALS:Ct(pF)