Data Sheet Super Fast Recovery Diode RF1501TF3S Series Dimensions (Unit : mm) Structure Standard Fast Recovery Applications General rectification RF1501 TF3S Features 1)Ultra low switching loss 2)High current overload capacity Construction Silicon epitaxial planer ROHM : O220NFM Manufacture Year Manufacture Week Absolute maximum ratings (Tc=25 C) Parameter Conditions Symbol Limits Unit Repetitive peak reverse voltage V Duty0.5 350 V RM V Reverse voltage Direct voltage 300 V R 60Hz half sin wave, Resistance load, Average rectified forward current Io Tc=37C 20 A 60Hz half sin wave, Non-repetitive I Forward current surge peak 100 A FSM one cycle peak value, Tj=25C Junction temperature Tj 150 C Storage temperature C Tstg 55 to 150 Electrical characteristics (Tj=25 C) Parameter Conditions Symbol Min. Typ. Max. Unit I =20A Forward voltage V 1.35 1.5 V F F Reverse current I V =300V 0.06 10 A R R I =0.5A,I =1A,Irr=0.25I Reverse recovery time trr 22 30 ns F R R junction to case Thermal resistance Rth(j-c) 3 C/W www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.12 - Rev.A 1/4Data Sheet RF1501TF3S 100 1000000 Tj=150 C 100000 Tj=125 C Tj=125 C 10 10000 Tj=150 C Tj=25 C 1000 Tj=75 C Tj=75 C 1 100 Tj=25 C 10 0.1 1 0 0.5 1 1.5 2 0 50 100 150 200 250 300 350 FORWARD VOLTAGEV (mV) REVERSE VOLTAGEV (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 1000 1300 I =20A f=1MHz F Tj=25 C 1200 AVE:1232mV 100 1100 10 1000 0 5 10 15 20 25 30 V DISPERSION MAP REVERSE VOLTAGE:V (V) F R V -Ct CHARACTERISTICS R 100 V =300V R f=1MHz Tj=25 C V =0V R 370 Tj=25 C 10 350 AVE:16.5nA AVE:356pF 1 330 Ct DISPERSION MAP I DISPERSION MAP R www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.12 - Rev.A 2/4 CAPACITANCE BETWEEN REVERSE CURRENT:I (nA) R FORWARD CURRENT:I (A) TERMINALS:Ct(pF) F CAPACITANCE BETWEEN FORWARD VOLTAGE:V (mV) F REVERSE CURRENT:I (nA) R TERMINALS:Ct(pF)