X-On Electronics has gained recognition as a prominent supplier of R6020ENX MOSFETs across the USA, India, Europe, Australia, and various other global locations. R6020ENX MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

R6020ENX ROHM

R6020ENX electronic component of ROHM
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See Product Specifications
Part No.R6020ENX
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET
Datasheet: R6020ENX Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)
1: AUD 5.3785 ( AUD 5.92 Inc GST) ea
Line Total: AUD 5.3785 ( AUD 5.92 Inc GST) 
Availability - 35
Ship by Thu. 03 Oct to Mon. 07 Oct
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
316
Ship by Fri. 27 Sep to Thu. 03 Oct
MOQ : 1
Multiples : 1
1 : AUD 6.5475
10 : AUD 5.174
100 : AUD 4.173
500 : AUD 3.575

35
Ship by Thu. 03 Oct to Mon. 07 Oct
MOQ : 1
Multiples : 1
1 : AUD 5.3785
10 : AUD 4.5823
25 : AUD 4.2992
100 : AUD 3.3615
500 : AUD 2.9015
1000 : AUD 2.76

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Series
Brand
Configuration
Height
Length
Transistor Type
Width
Cnhts
Fall Time
Hts Code
Mxhts
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Typical Turn-On Delay Time
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We are delighted to provide the R6020ENX from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the R6020ENX and other electronic components in the MOSFETs category and beyond.

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R6020ENX Datasheet Nch 600V 20A Power MOSFET llOutline V 600V DSS R (Max.) 0.196 DS(on) TO-220FM I 20A D P 68W D llInner circuit llFeatures 1) Low on-resistance 2) Fast switching 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-free plating RoHS compliant llPackaging specifications Code Packing C7 G Tube llApplication C7 Tube* Switching - (Blank) Bulk* *Package dimensions are different llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage 600 V DSS *1 I Continuous drain current 20 A D *2 Pulsed drain current I 60 A DP Static 20 V V Gate - Source voltage GSS AC (f 1Hz) 30 V I Avalanche current, repetitive 3.4 A AS *3 Avalanche energy, single pulse E 418 mJ AS *3 E Avalanche energy, repetitive 0.63 mJ AS Power dissipation (T = 25C) P 68 W c D Junction temperature T 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/12 2019 ROHM Co., Ltd. All rights reserved. 20190603 - Rev.002 R6020ENX Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Conditions Values Unit Reverse diode dv/dt dv/dt - 15 V/ns Drain - Source voltage slope dv/dt V = 480V, T = 25 50 V/ns DS j llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - - 1.8 /W thJC R Thermal resistance, junction - ambient - - 70 /W thJA T Soldering temperature, wavesoldering for 10s - - 265 sold llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 600 - - V (BR)DSS GS D voltage V = 600V, V = 0V DS GS Zero gate voltage I T = 25C - 0.1 100 A DSS j drain current T = 125C - - 1000 j I Gate - Source leakage current V = 20V, V = 0V - - 100 nA GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 2 - 4 V GS(th) DS D V = 10V, I = 9.5A GS D Static drain - source *5 R T = 25C - 0.170 0.196 DS(on) j on - state resistance T = 125C - 0.36 - j R Gate resistance f =1MHz, open drain - 5.8 - G www.rohm.com 2/12 20190603 - Rev.002 2019 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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