QS5K2 Transistors 2.5V Drive Nch+Nch MOSFET QS5K2 z Structure z Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT5 1.0MAX 2.9 0.85 1.9 0.95 0.95 0.7 z Features (5) (4) 1) Low On-resistance. 3) Space saving, small surface mount package (TSMT5). 0~0.1 (1) (2) (3) 0.4 0.16 zApplications Each lead has same dimensions Switching Abbreviated symbol : K02 z Packaging specifications z Inner circuit (5) (4) Package Taping Type Code TR 2 2 Basic ordering unit (pieces) 3000 QS5K2 (1) Tr1 Gate 1 1 (2) Tr1 Source Tr2 Source (1) (2) (3) (3) Tr2 Gate (4) Tr2 Drain 1 ESD PROTECTION DIODE (5) Tr1 Drain 2 BODY DIODE z Absolute maximum ratings (Ta=25C) <It is the same ratings for the Tr1 and Tr2> Parameter Symbol Limits Unit Drain-source voltage VDSS 30 V Gate-source voltage V 12 V GSS Continuous ID 2.0 A Drain current 1 Pulsed IDP 8.0 A Source current Continuous IS 0.8 A (Body diode) 1 Pulsed I 3.2 A SP 1.25 W / TOTAL 2 Total power dissipation P D 0.9 W / ELEMENT Channel temperature Tch 150 C Tstg 55 to +150 C Range of storage temperature 1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board z Thermal resistance Parameter Symbol Limits Unit 100 C/W Channel to ambient Rth(ch-a) 139 C/W Mounted on a ceramic board Rev.A 1/3 1.6 2.8 0.3~0.6QS5K2 Transistors z Electrical characteristics (Ta=25C) <It is the same characteristics for the Tr1 and Tr2> Parameter Symbol Min. Typ. Max. Conditions Unit Gate-source leakage IGSS 10 AVGS=12V, VDS=0V Drain-source breakdown voltage V 30 VI = 1mA, V =0V (BR) DSS D GS Zero gate voltage drain current IDSS 1 AVDS= 30V, VGS=0V Gate threshold voltage VGS (th) 0.5 1.5 V VDS= 10V, ID= 1mA 71 100 m I = 2A, V = 4.5V D GS Static drain-source on-state RDS (on) 76 107 m ID= 2A, VGS= 4.0V resistance 110 154 m ID= 2A, VGS= 2.5V Forward transfer admittance Yfs 1.5 SVDS= 10V, ID= 2A Input capacitance C 175 pF V = 10V iss DS Output capacitance Coss 50 pF VGS=0V Reverse transfer capacitance Crss 25 pF f=1MHz Turn-on delay time t 8 ns VDD 15V d (on) ID= 1A Rise time tr 10 ns VGS= 4.5V Turn-off delay time td (off) 21 ns RL= 15 Fall time tf 8 ns RG=10 Total gate charge Q 2.8 3.9 nC V 15V g DD Gate-source charge Qgs 0.6 nC VGS= 4.5V Gate-drain charge Qgd0.8 nC ID= 2A Pulsed z Body diode characteristics (Source-drain) (Ta=25C) <It is the same characteristics for the Tr1 and Tr2> Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V IS= 3.2A, VGS=0V Pulsed Rev.A 2/3