2SCR554R Datasheet NPN 1.5A 80V Middle Power Transistor llOutline Parameter Value TSMT3 V 80V CEO I 1.5A C SOT-346T SC-96 llFeatures 1)Suitable for Middle Power Driver llInner circuit 2)Complementary PNP Types:2SAR554R 3)Low V CE(sat) V =300mV(Max.) CE(sat) (I /I =500mA/25mA) C B llApplication LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) 2SCR554R TSMT3 2928 TL 180 8 3000 NH www.rohm.com 1/6 20150730 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.2SCR554R Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 80 V CBO V Collector-emitter voltage 80 V CEO V Emitter-base voltage 6 V EBO I 1.5 A C Collector current *1 I 3 A CP *2 P 0.5 W D Power dissipation *3 P 1.0 W D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 100A 80 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 80 - - V CEO C voltage BV Emitter-base breakdown voltage I = 100A 6 - - V EBO E I Collector cut-off current V = 80V - - 1.0 A CBO CB Emitter cut-off current I V = 4V - - 1.0 A EBO EB Collector-emitter saturation voltage V I = 500mA, I = 25mA - 100 300 mV CE(sat) C B DC current gain h V = 3V, I = 100mA 120 - 390 - FE CE C V = 10V, I = -200mA, CE E f Transition frequency - 300 - MHz T f = 100MHz V = 10V, I = 0A, CB E C Output capacitance - 10 - pF ob f = 1MHz I = 700mA, C t Turn-On time - 50 - ns on I = 70mA, B1 I = -70mA, B2 Storage time t - 600 - ns stg V 10V, CC R = 15 L t Fall time - 60 - ns f See test circuit *1 P =10ms Single pulse W *2 Each terminal mounted on a reference land. *3 Mounted on a ceramic board(40400.7mm). www.rohm.com 2/6 20150730 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.