2SC5866 Datasheet Medium power transistor (60V, 2A) llOutline Parameter Value TSMT3 V 60V CEO I 2A C SOT-346T SC-96 llFeatures 1)High speed switching. llInner circuit (t :Typ.:35ns at I =2A) f C 2)Low saturation voltage, typically (Typ.:200mV at I =1.0A, I =100mA) C B 3)Storong discharge power for inductive load and capacitance load. 4)Complements the 2SA2094 llApplication LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) 2SC5866 TSMT3 2928 TL 180 8 3000 VL www.rohm.com 1/6 20150730 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.2SC5866 Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 60 V CBO V Collector-emitter voltage 60 V CEO Emitter-base voltage V 6 V EBO I 2 A C Collector current *1 I 4 A CP *2 Power dissipation P 0.5 W D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 100A 60 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 60 - - V CEO C voltage Emitter-base breakdown voltage BV I = 100A 6 - - V EBO E I Collector cut-off current V = 40V - - 1.0 A CBO CB Emitter cut-off current I V = 4V - - 1.0 A EBO EB Collector-emitter saturation voltage V I = 1.0A, I = 100mA - 200 500 mV CE(sat) C B h DC current gain V = 2V, I = 100mA 120 - 390 - FE CE C V = 10V, I = -100mA, CE E *3 Transition frequency - 200 - MHz f T f = 10MHz V = 10V, I = 0A, CB E C Output capacitance - 10 - pF ob f = 1MHz *3 I = 2A, C Turn-On time t - 50 - ns on I = 200mA, B1 I = -200mA, B2 *3 Storage time t - 120 - ns stg V 25V, CC R = 12.5 L *3 t Fall time - 35 - ns f See test circuit hFE values are calssified as follows : rank Q R - - - hFE 120-270 180-390 - - - *1 Pw=10ms *2 Each terminal mounted on a reference land. *3 Pulsed www.rohm.com 2/6 20150730 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.