2SAR523M / 2SAR523EB / 2SAR523UB PNP -100mA -50V General Purpose Transistor Datasheet llOutline Parameter Value SOT-723 SOT-416FL V -50V CEO I -100mA C 2SAR523M 2SAR523EB (VMT3) (EMT3F) SOT-323FL 2SAR523UB (UMT3F) llFeatures llInner circuit 1) General Purpose. 2) Complementary NPN Types: 2SCR523M (VMT3) / 2SCR523EB (EMT3F) / 2SCR523UB (UMT3F) llApplication GENERAL PURPOSE SMALL SIGNAL AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-723 2SAR523M 1212 T2L 180 8 8000 PB (VMT3) SOT-416FL 2SAR523EB 1616 TL 180 8 3000 PB (EMT3F) SOT-323FL 2SAR523UB 2021 TL 180 8 3000 PB (UMT3F) www.rohm.com 1 / 8 20151204 - Rev.002 2015 ROHM Co., Ltd. All rights reserved. 2SAR523M / 2SAR523EB / 2SAR523UB Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage -50 V CBO Collector-emitter voltage V -50 V CEO V Emitter-base voltage -5 V EBO I -100 mA C Collector current *1 I -200 mA CP 2SAR523M 150 *2 P Power dissipation 2SAR523EB 150 mW D 2SAR523UB 200 T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -50A -50 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -50 - - V CEO C voltage BV Emitter-base breakdown voltage I = -50A -5 - - V EBO E Collector cut-off current I V = -50V - - -100 nA CBO CB I Emitter cut-off current V = -5V - - -100 nA EBO EB Collector-emitter saturation voltage V I = -50mA, I = -5mA - -150 -400 mV CE(sat) C B h DC current gain V = -6V, I = -1mA 120 - 560 - FE CE C V = -10V, I = 10mA, CE E f Transition frequency - 300 - MHz T f = 100MHz V = -10V, I = 0A, CB E C Output capacitance - 2.0 - pF ob f = 1MHz *1 Pw=10ms Single Pulse *2 Each terminal mounted on a reference land. www.rohm.com 2/8 20151204 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.