QPD1881L 400 W, 50 V, 2.7 2.9 GHz, GaN RF Power Transistor Product Overview The Qorvo QPD1881L is a 400 W (P3dB) discrete GaN on SiC HEMT which operates from 2.7 to 2.9 GHz. Input pre-match within the package results in ease of external board match and saves board space. The device is in an industry standard air cavity package and is ideally suited for civilian radar, weather radar and test instrumentation. The device can support both CW and pulsed operations. Lead-free and ROHS compliant 2-lead NI-780 Package (Eared) Evaluation boards are available upon request. Key Features Frequency: 2.7 to 2.9 GHz 1 Output Power (P ) : 427 W 3dB Functional Block Diagram 1 Linear Gain : 21.2 dB 1 Typical PAE3dB : 75.1% Operating Voltage: 50 V CW and Pulse capable Note 1: 2.9 GHz Load Pull Applications Civilian radar Weather radar Test instrumentation Ordering info Part No. ECCN Description QPD1881L EAR99 2.7 2.9 GHz Transistor QPD1881LS2 EAR99 2 Piece Sample Bag QPD1881LEVB01 EAR99 2.7 2.9 GHz Evaluation Board Datasheet Rev. A Subject to change without notice - 1 of 18 - www.qorvo.com QPD1881L 400 W, 50 V, 2.7 2.9 GHz, GaN RF Power Transistor 1, 2, 3 1, 2, 3, 4 Absolute Maximum Ratings Recommended Operating Conditions Parameter Min Typ Max Units Parameter Rating Units Operating Temp. Range 40 +25 +85 C Breakdown Voltage,BV 145 V DG Drain Voltage Range, V +50 V D Gate Voltage Range, VG -7 to +2 V Drain Bias Current, I 0.7 A DQ Drain Current, IDMAX 56 A 4 Drain Current, ID 13 A Drain Voltage, V 55 V D 3 Gate Voltage, V 2.8 V G Gate Current Range, IG See pg. 12 mA Channel Temperature (TCH) 250 C Power Dissipation, Pulsed, 466 W 2,4 2 Power Dissipation (P ) 418 W D PDISS 2 Power Dissipation (P ), CW 213 W D Power Dissipation, CW, P 237 W DISS 3 Notes: RF Input Power, Pulsed, PIN 41.9 dBm 1. Electrical performance is measured under conditions noted Channel Temperature, TCH 275 C in the electrical specifications table. Specifications are not Mounting Temperature guaranteed over all recommended operating conditions 320 C (30Seconds) 2. Package base at 85 C 3. To be adjusted to desired I DQ Storage Temperature 65 to +150 C 4. Pulsed, 100us PW, 10% DC Notes: 1. Operation of this device outside the parameter ranges given above may cause permanent damage 2. Pulsed, 100us PW, 10% DC, Package base at 85 C 3. Pulsed, 100us PW, 10% DC, T = 25 C 1, 2 Measured Load Pull Performance Power Tuned Parameter Typical Values Units Frequency, F 2.7 2.9 GHz Output Power at 3dB compression, P 56.2 56.3 dBm 3dB Power Added Efficiency at 3dB compression, 67.8 63.3 % PAE 3dB Gain at 3dB compression, G3dB 17.3 16.6 dB Notes: 1. Test conditions unless otherwise noted: TA = 25 C, VD = 50 V, IDQ = 700 mA 2. Pulsed, 100 us Pulse Width, 10% Duty Cycle. 1, 2 Measured Load Pull Performance Efficiency Tuned Typical Values Parameter Units Frequency, F 2.7 2.9 GHz Output Power at 3dB compression, P3dB 55.1 54.4 dBm Power Added Efficiency at 3dB compression, 73.2 75.1 % PAE3dB Gain at 3dB compression, G 3dB 18.5 18.2 dB Notes: 1. Test conditions unless otherwise noted: T = 25 C, V = 50 V, I = 700 mA A D DQ 2. Pulsed, 100 us Pulse Width, 10% Duty Cycle. Datasheet Rev. A Subject to change without notice - 2 of 18 - www.qorvo.com