2016-03-07 High Power Infrared Emitter (850 nm) Version 1.7 / acc. to OS-PCN-2015-025-A SFH 4258S Features: High Power Infrared LED Double Stack emitter Half angle: 15 High forward current allowed at high temperature The product qualification test plan is based on the guidelines of AEC-Q101-REV-C, Stress Test Qualification for Automotive Grade Discrete Semiconductors. Applications Industrial applications Infrared Illumination for cameras IR data transmission Sensor technology Automotive technology Notes Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which can be hazardous to the human eye. Products which incorporate these devices have to follow the safety precautions given in IEC 60825-1 and IEC 62471. Ordering Information Type: Radiant Intensity Ordering Code I mW/sr e I =100 mA, t =20 ms F p SFH 4258S 185 ( 80) Q65111A1158 Note: Measured at a solid angle of = 0.01 sr 2016-03-07 1Version 1.7 / acc. to OS-PCN-2015-025-A SFH 4258S Maximum Ratings (T = 25 C) A Parameter Symbol Values Unit Operation and storage temperature range T T -40 ... 100 C op stg Reverse voltage V 5 V R Forward current I 100 mA F Surge current I 0.7 A FSM (t 300 s, D = 0) p Power consumption P 245 mW tot ESD withstand voltage V 2 kV ESD (acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM) 1) page 12 Thermal resistance junction - ambient R 300 K / W thJA Thermal resistance junction - soldering point R 140 K / W thJS 2) page 12 Characteristics (T = 25 C) A Parameter Symbol Values Unit Peak wavelength (typ) 860 nm peak (I = 100 mA, t = 20 ms) F p Centroid wavelength (typ) 850 nm centroid (I = 100 mA, t = 20 ms) F p Spectral bandwidth at 50% of I (typ) 30 nm max (I = 100 mA, t = 20 ms) F p Half angle (typ) 15 Dimensions of active chip area (typ) L x W 0.3 x 0.3 mm x mm Rise and fall time of I ( 10% and 90% of I ) (typ) t , t 15 ns e e max r f (I = 100 mA, R = 50 ) F L Forward voltage (typ (max)) V 3.1 ( 3.6) V F (I = 100 mA, t = 20 ms) F p Forward voltage (typ (max)) V 4 ( 5.2) V F (I = 700 mA, t = 100 s) F p Reverse current I not designed for A R (V = 5 V) reverse operation R Total radiant flux (typ) 115 mW e (I = 100 mA, t =20 ms) F p 2016-03-07 2