ZTX749 ZTX749 PNP Low Saturation Transistor This device are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. C TO-226 B E Absolute Maximum Ratings T =25C unless otherwise noted A Symbol Parameter Value Units V Collector-Emitter Voltage -25 V CEO V Collector-Base Voltage -35 V CBO V Emitter-Base Voltage -5 V EBO I Collector Current - Continuous -2 A C T , T Operating and Storage Junction Temperature Range -55 ~ +150 C J STG * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics T =25C unless otherwise noted A Symbol Parameter Test Condition Min. Max. Units Off Characteristics BV Collector-Emitter Breakdown Voltage I = -10mA -25 V CEO C BV Collector-Base Breakdown Voltage I = -100A-35 V CBO C BV Emitter-Base Breakdown Voltage I = -100A-5 V EBO E I Collector Cutoff Current V = -30V -100 nA CBO CB V = -30V, T = 100C -10 A CB A I Emitter Cutoff Current V = -4V -100 nA EBO EB On Characteristics* h DC Current Gain I = -50mA, V = -2V 70 FE C CE I = -1A, V = -2V 100 300 C CE I = -2A, V = -2V 75 C CE I = -6A, V = -2V 15 C CE V (sat) Collector-Emitter Saturation Voltage I = -1A, I = -100mA -300 mV CE C B I = -2A, I = -200mA -500 C B V (sat) Base-Emitter Saturation Voltage I = -1A, I = -100mA -1.25 V BE C B V (on) Base-Emitter On Voltage I = -1A, V = -2V -1 V BE C CE Small-Signal Characteristics C Output Capacitance V = -10V, I = 0, f = 1MHz 100 PF obo CB E f Transition Frequency I = 1-00mA, V = -5V 100 T C CE f = 100MHz * Pulse Test: Pulse Width 300 s, Duty Cycle 2% Thermal Characteristics T =25C unless otherwise noted A Symbol Parameter Max. Units P Total Device Dissipation 1 W D R Thermal Resistance, Junction to Ambient 125 C/W JA 2003 Fairchild Semiconductor Corporation Rev. A, August 2003ZTX749 Package Dimensions TO-226 S4.70- 4.32 S1.52- 1.02 2 TYP S7.73- 7.10 S7.87- 7.37 2 TYP S1.65- 1.27 0.51 S0.76- 0.36 S15.61-14.47 S0.51- 0.36 S0.48- 0.30 S1.40-1.14 S1.40- 1.14 99 95 S4.45- 3.81 1EE 5 TYP 2BC 3CB 1 2 3 TO-226AE (95,99) For leadformed option ordering, S2.41- 2.13 refer to Tape & Reel data information. Dimensions in Millimeters 2003 Fairchild Semiconductor Corporation Rev. A, August 2003 PIN