PZT2222A NPN Silicon Planar Epitaxial Transistor This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT223 package which is designed for medium power surface mount www.onsemi.com applications. SOT223 PACKAGE Features PNP Complement is PZT2907AT1 NPN SILICON TRANSISTOR The SOT223 Package Can be Soldered Using Wave or Reflow SURFACE MOUNT SOT223 Package Ensures Level Mounting, Resulting in Improved 4 Thermal Conduction, and Allows Visual Inspection of Soldered 1 Joints 2 3 The Formed Leads Absorb Thermal Stress During Soldering, SOT223 (TO261) CASE 318E04 Eliminating the Possibility of Damage to the Die STYLE 1 Available in 12 mm Tape and Reel S Prefix for Automotive and Other Applications Requiring Unique COLLECTOR 2, 4 Site and Control Change Requirements AECQ101 Qualified and PPAP Capable BASE These Devices are PbFree, Halogen Free/BFR Free and are RoHS 1 Compliant* 3 MAXIMUM RATINGS EMITTER Rating Symbol Value Unit MARKING DIAGRAM CollectorEmitter Voltage V 40 Vdc CEO CollectorBase Voltage V 75 Vdc CBO AYM EmitterBase Voltage V 6.0 Vdc P1F EBO (Open Collector) Collector Current I 600 mAdc C Total Power Dissipation P W A = Assembly Location D up to T = 25C (Note 1) 1.5 Y = Year A M = Month Code Storage Temperature Range T 65 to +150 C stg = PbFree Package Junction TemperatureRange T 55 to +150 C (Note: Microdot may be in either location) J Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be ORDERING INFORMATION assumed, damage may occur and reliability may be affected. Device Package Shipping 1. Device mounted on an epoxy printed circuit board 1.575 inches x 1.575 inches x 2 0.059 inches mounting pad for the collector lead min. 0.93 inches . PZT2222AT1G SOT223 1,000 Tape & Reel (PbFree) THERMAL CHARACTERISTICS SPZT2222AT1G SOT223 1,000 Tape & Reel Rating Symbol Value Unit (PbFree) Thermal Resistance, R 83.3 C/W JA PZT2222AT3G SOT223 4,000 Tape & Reel JunctiontoAmbient (PbFree) Lead Temperature for Soldering, T 260 C L For information on tape and reel specifications, 0.0625 from case 10 Sec including part orientation and tape sizes, please Time in Solder Bath refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: December, 2018 Rev. 11 PZT2222AT1/DPZT2222A ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (I = 10 mAdc, I = 0) V 40 Vdc C B (BR)CEO CollectorBase Breakdown Voltage (I = 10 Adc, I = 0) V 75 Vdc C E (BR)CBO EmitterBase Breakdown Voltage (I = 10 Adc, I = 0) V 6.0 Vdc E C (BR)EBO BaseEmitter Cutoff Current (V = 60 Vdc, V = 3.0 Vdc) I 20 nAdc CE BE BEX CollectorEmitter Cutoff Current (V = 60 Vdc, V = 3.0 Vdc) I 10 nAdc CE BE CEX EmitterBase Cutoff Current (V = 3.0 Vdc, I = 0) I 100 nAdc EB C EBO CollectorBase Cutoff Current I CBO (V = 60 Vdc, I = 0) 10 nAdc CB E (V = 60 Vdc, I = 0, T = 125C) 10 Adc CB E A ON CHARACTERISTICS DC Current Gain h FE (I = 0.1 mAdc, V = 10 Vdc) 35 C CE (I = 1.0 mAdc, V = 10 Vdc) 50 C CE (I = 10 mAdc, V = 10 Vdc) 70 C CE (I = 10 mAdc, V = 10 Vdc, T = 55C) 35 C CE A (I = 150 mAdc, V = 10 Vdc) 100 300 C CE (I = 150 mAdc, V = 1.0 Vdc) 50 C CE (I = 500 mAdc, V = 10 Vdc) 40 C CE CollectorEmitter Saturation Voltages V Vdc CE(sat) (I = 150 mAdc, I = 15 mAdc) 0.3 C B (I = 500 mAdc, I = 50 mAdc) 1.0 C B BaseEmitter Saturation Voltages V Vdc BE(sat) (I = 150 mAdc, I = 15 mAdc) 0.6 1.2 C B (I = 500 mAdc, I = 50 mAdc) 2.0 C B Input Impedance h k ie (V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz) 2.0 8.0 CE C (V = 10 Vdc, I = 10 mAdc, f = 1.0 kHz) 0.25 1.25 CE C Voltage Feedback Ratio h re 4 (V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz) 8.0x10 CE C 4 (V = 10 Vdc, I = 10 mAdc, f = 1.0 kHz) 4.0x10 CE C SmallSignal Current Gain h fe (V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz) 50 300 CE C (V = 10 Vdc, I = 10 mAdc, f = 1.0 kHz) 75 375 CE C Output Admittance h mhos oe (V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz) 5.0 35 CE C (V = 10 Vdc, I = 10 mAdc, f = 1.0 kHz) 25 200 CE C Noise Figure (V = 10 Vdc, I = 100 Adc, f = 1.0 kHz) F 4.0 dB CE C DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product f MHz T (I = 20 mAdc, V = 20 Vdc, f = 100 MHz) 300 C CE Output Capacitance (V = 10 Vdc, I = 0, f = 1.0 MHz) C 8.0 pF CB E c Input Capacitance (V = 0.5 Vdc, I = 0, f = 1.0 MHz) C 25 pF EB C e SWITCHING TIMES (T = 25C) A Delay Time (V = 30 Vdc, I = 150 mAdc, t 10 ns CC C d I = 15 mAdc, V = 0.5 Vdc) B(on) EB(off) Rise Time t 25 r Figure 1 (V = 30 Vdc, I = 150 mAdc, Storage Time t 225 ns CC C s I = I = 15 mAdc) B(on) B(off) Fall Time t 60 Figure 2 f www.onsemi.com 2