MOSFET Power, Single, P-Channel, SC-70 -8.0 V, -1.4 A NTS2101P Features www.onsemi.com Leading Trench Technology for Low R Extending Battery Life DS(on) 1.8 V Rated for Low Voltage Gate Drive V R Typ I Max (BR)DSS DS(on) D SC70 Surface Mount for Small Footprint (2 x 2 mm) 65 m 4.5 V These Devices are PbFree, Halogen Free/BFR Free and are RoHS 8.0 V 1.4 A 78 m 2.5 V Compliant 117 m 1.8 V Applications High Side Load Switch Charging Circuit PChannel MOSFET S Single Cell Battery Applications such as Cell Phones, Digital Cameras, PDAs, etc. MAXIMUM RATINGS (T = 25C unless otherwise stated) J G Parameter Symbol Value Units DraintoSource Voltage V 8.0 V DSS GatetoSource Voltage V 8.0 V GS D Continuous Drain Steady T = 25C I 1.4 A A D Current (Note 1) State T = 70C 1.1 A MARKING DIAGRAM & t 5 s T = 25C 1.5 A A PIN ASSIGNMENT 3 Power Dissipation Steady T = 25C P 0.29 W Drain A D (Note 1) State 3 t 5 s 0.33 W 1 TS M 2 Pulsed Drain Current I 3.0 A tp = 10 s DM SC70/SOT323 2 1 Operating Junction and Storage Temperature T , 55 to C J CASE 419 T 150 STG Gate Source STYLE 8 Source Current (Body Diode), Continuous I 0.46 A S TS = Device Code Lead Temperature for Soldering Purposes T 260 C L M = Date Code* (1/8 from case for 10 s) = PbFree Package THERMAL RESISTANCE RATINGS (Note: Microdot may be in either location) Parameter Symbol Max Units *Date Code orientation may vary depending upon manufacturing location. C/W JunctiontoAmbient Steady State (Note 1) R 430 JA ORDERING INFORMATION JunctiontoAmbient t 5 s (Note 1) R 375 JA Stresses exceeding those listed in the Maximum Ratings table may damage the Device Package Shipping device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. NTS2101PT1 SOT323 3000/Tape & Reel 1. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq 1 oz including traces). SOT323 NTS2101PT1G 3000/Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2006 1 Publication Order Number: February, 2020 Rev. 2 NTS2101P/DNTS2101P ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise stated) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 8.0 20 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 10 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 A DSS GS J V = 6.4 V DS T = 70C 5.0 J GatetoSource Leakage Current I V = 0 V, V = 8.0 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V V = V , I = 250 A 0.45 0.7 1.0 V GS(TH) GS DS D Negative Threshold V /T 2.6 mV/C GS(TH) J Temperature Coefficient DraintoSource On Resistance R V = 4.5 V, I = 1.0 A 65 100 m DS(on) GS D V = 2.5 V, I = 0.5 A 78 140 GS D V = 1.8 V, I = 0.3 A 117 210 GS D CHARGES AND CAPACITANCES Input Capacitance C V = 0 V, f = 1.0 MHz, 640 pF ISS GS V = 8.0 V DS Output Capacitance C 120 OSS Reverse Transfer Capacitance C 82 RSS Total Gate Charge Q V = 5.0 V, V = 5.0 V, 6.4 nC G(TOT) GS DD I = 1.0 A D Threshold Gate Charge Q 0.7 G(TH) GatetoSource Charge Q 1.0 GS GatetoDrain Charge Q 1.5 GD SWITCHING CHARACTERISTICS (Note 3) TurnOn Delay Time t V = 4.5 V, V = 4.0 V, 6.2 ns d(ON) GS DD I = 1.0 A, R = 6.2 D G Rise Time t 15 r TurnOff Delay Time t 26 d(OFF) Fall Time t 18 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V V = 0 V, T = 25C 0.62 1.2 V SD GS J I = 0.3 A S T = 125C 0.51 J ns Reverse Recovery Time t V = 0 V, dI /dt = 100 A/ s, 23.4 RR GS SD I = 1.0 A S Charge Time T 7.7 a Discharge Time T 15.7 b Reverse Recovery Charge Q 9.5 nC RR 2. Pulse Test: pulse width 300 s, duty cycle 2%. 3. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2