NSR05F20NXT5G ON Semiconductor

NSR05F20NXT5G Schottky Barrier Diode, 20 V These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current and are offered in a Chip Scale Package (CSP) to reduce board space. The low thermal resistance enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements. NSR05F20NXT5G THERMAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit Thermal Resistance JunctiontoAmbient (Note 1) 240 C/W R JA Total Power Dissipation T = 25C P 521 mW A D Thermal Resistance JunctiontoAmbient (Note 2) R 94 C/W JA Total Power Dissipation T = 25C P 1.3 W A D Storage Temperature Range T 40 to +125 C stg Junction Temperature T +150 C J 1. Mounted onto a 4 in square FR4 board 50 mm sq. 1 oz. Cu 0.06 thick single sided. Operating to steady state. 2. Mounted onto a 4 in square FR 4 board 1 in sq. 1 oz. Cu 0.06 thick single sided. Operating to steady state. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Reverse Leakage I A R (V = 10 V) 15 R (V = 20 V) 75 R Forward Voltage V V F (I = 100 mA) 0.330 0.345 F (I = 500 mA) 0.390 0.430 F