NCV8876 Automotive Grade Start-Stop Non-Synchronous Boost Controller The NCV8876 is a Non-Synchronous Boost controller designed to supply a minimum output voltage during Start-Stop vehicle operation www.onsemi.com battery voltage sags. The controller drives an external N-channel MOSFET. The device uses peak current mode control with internal MARKING slope compensation. The IC incorporates an internal regulator that DIAGRAM supplies charge to the gate driver. 8 Protection features include, cycle-by-cycle current limiting, SOIC8 protection and thermal shutdown. 8876xx D SUFFIX ALYW 8 Additional features include low quiescent current sleep mode CASE 751 1 operation. The NCV8876 is enabled when the supply voltage drops 1 below 7.3 V, with boost operation initiated when the supply voltage is below 6.8 V. 8876xx = Specific Device Code xx = 00, 01 Features A = Assembly Location Automatic Enable Below 7.3 V (Factory Programmable) L = Wafer Lot Y = Year Boost Mode Operation at 6.8 V W = Work Week 2% Output Accuracy Over Temperature Range = PbFree Package Peak Current Mode Control with Internal Slope Compensation Externally Adjustable Frequency Operation PIN CONNECTIONS Wide Input Voltage Range of 2 V to 40 V, 45 V Load Dump Low Quiescent Current in Sleep Mode (<11 A Typical) STATUS 1 8 ROSC CyclebyCycle Current Limit Protection ISNS 2 7 VC HiccupMode Overcurrent Protection (OCP) GND 3 6 VOUT Thermal Shutdown (TSD) This is a PbFree Device GDRV 4 5 VDRV Typical Applications (Top View) Applications Requiring Regulated Voltage through Cranking and StartStop Operation ORDERING INFORMATION Device Package Shipping NCV887600D1R2G SOIC8 2500 / Tape & (PbFree) Reel NCV887601D1R2G SOIC8 2500 / Tape & (PbFree) Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: November, 2018 Rev. 13 NCV8876/DNCV8876 V g C g TEMP L VDRV C DRV VDRV FAULT NRVB440FS 5 LOGIC V o NVMFS5844NL CLK Q ROSC GDRV 8 OSC DRIVE C 4 o LOGIC SC R OSC R GDRV ISNS 2 CL CSA R SNS GND VC 3 7 + SCP R C V micro C decoupling VOUT Gm WAKEUP 6 C C V STATUS REF 1 STATUS Battery In Figure 1. Typical Application Sleep Threshold 7.7 V Wakeup Threshold 7.3 V VOUT Regulation 6.8 V Wakeup (Internal signal) Internal Clamp COMP Voltage GDRV Wakeup Delay Comp Delay Figure 2. Functional Waveforms PACKAGE PIN DESCRIPTIONS Pin Symbol Pin No. Function 1 STATUS This is an opendrain diagnostic. IC status operation flag indicator. This output is a logic low when IC VOUT is below 7.3 V and device is active. A pullup resistor of around 80 k should be connected between STATUS and a microcontroller reference. This output is a logic high when the IC is disabled or in UVLO. 2 ISNS Current sense input. Connect this pin to the source of the external NMOSFET, through a currentsense res- istor to ground to sense the switching current for regulation and current limiting. 3 GND Ground reference. 4 GDRV Gate driver output. Connect to gate of the external N MOSFET. A series resistance can be added from GDRV to the gate to tailor EMC performance. An R = 15 k GDRVGND resistor is strongly recommended. GND 5 VDRV Driving voltage. Internally regulated supply for driving the external N MOSFET, sourced from VOUT. Bypass with a 1.0 F ceramic capacitor to ground. 6 VOUT Monitors output voltage and provides IC input voltage. 7 VC Output of the voltage error transconductance amplifier. An external compensator network from VC to GND is used to stabilize the converter. 8 ROSC Use a resistor to ground to set the frequency. www.onsemi.com 2 PWM