MMBT5401W High Voltage Transistor PNP Silicon Features NSV Prefix for Automotive and Other Applications Requiring www.onsemi.com Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable COLLECTOR 3 These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit 2 EMITTER CollectorEmitter Voltage V 150 Vdc CEO CollectorBase Voltage V 160 Vdc CBO EmitterBase Voltage V 5.0 Vdc EBO Collector Current Continuous I 500 mAdc C Stresses exceeding those listed in the Maximum Ratings table may damage SC70 (SOT323) the device. If any of these limits are exceeded, device functionality should not CASE 419 be assumed, damage may occur and reliability may be affected. STYLE 3 THERMAL CHARACTERISTICS MARKING DIAGRAM Characteristic Symbol Max Unit Total Device Dissipation P 400 mW D FR5 Board (Note 2) 4W M T = 25C A Derate Above 25C 3.2 mW/C Thermal Resistance, R 312 C/W 1 JA JunctiontoAmbient 4W = Specific Device Code Junction and Storage Temperature T , T 55 to +150 C J stg M = Date Code* 2 = PbFree Package 1. FR5 100 mm , 0.5 oz. copper traces, still air. 2. FR5 = 1.0 0.75 0.062 in. (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping MMBT5401WT1G, SC70 3000 / Tape & NSVMMBT5401WT1G (PbFree) Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: December, 2017 Rev. 3 MMBT5401W/DMMBT5401W ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage V Vdc (BR)CEO (I = 1.0 mAdc, I = 0) 150 C B CollectorBase Breakdown Voltage V Vdc (BR)CBO (I = 100 Adc, I = 0) 160 C E EmitterBase Breakdown Voltage V Vdc (BR)EBO (I = 10 Adc, I = 0) 5.0 E C CollectorBase Cutoff Current I CBO (V = 120 Vdc, I = 0) 50 nAdc CB E (V = 120 Vdc, I = 0, T = 100C) 50 Adc CB E A ON CHARACTERISTICS DC Current Gain h FE (I = 1.0 mAdc, V = 5.0 Vdc) 50 C CE (I = 10 mAdc, V = 5.0 Vdc) 60 240 C CE (I = 50 mAdc, V = 5.0 Vdc) 50 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 10 mAdc, I = 1.0 mAdc) 0.2 C B (I = 50 mAdc, I = 5.0 mAdc) 0.5 C B BaseEmitter Saturation Voltage V Vdc BE(sat) (I = 10 mAdc, I = 1.0 mAdc) 1.0 C B (I = 50 mAdc, I = 5.0 mAdc) 1.0 C B SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product f MHz T (I = 10 mAdc, V = 10 Vdc, f = 100 MHz) 100 300 C CE Output Capacitance C pF obo (V = 10 Vdc, I = 0, f = 1.0 MHz) 6.0 CB E Small Signal Current Gain h fe (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) 40 200 C CE Noise Figure NF dB (I = 200 Adc, V = 5.0 Vdc, R = 10 , f = 1.0 kHz) 8.0 C CE S Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2