X-On Electronics has gained recognition as a prominent supplier of MMBT5088LT1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MMBT5088LT1G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MMBT5088LT1G ON Semiconductor

MMBT5088LT1G electronic component of ON Semiconductor
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See Product Specifications
Part No.MMBT5088LT1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Trans GP BJT NPN 30V 0.05A 3-Pin SOT-23 T/R
Datasheet: MMBT5088LT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)
3000: AUD 0.0407 ( AUD 0.04 Inc GST) ea
Line Total: AUD 122.1 ( AUD 134.31 Inc GST) 
Availability - 32010
Ship by Tue. 15 Oct to Mon. 21 Oct
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
32010
Ship by Tue. 15 Oct to Mon. 21 Oct
MOQ : 3000
Multiples : 3000
3000 : AUD 0.0407
9000 : AUD 0.0375
27000 : AUD 0.0369
51000 : AUD 0.0353
102000 : AUD 0.0349
150000 : AUD 0.0343
252000 : AUD 0.0338
501000 : AUD 0.0332

25443
Ship by Tue. 15 Oct to Mon. 21 Oct
MOQ : 1
Multiples : 1
1 : AUD 0.2416
10 : AUD 0.1651
25 : AUD 0.1638
100 : AUD 0.0889
250 : AUD 0.0881
500 : AUD 0.0871
1000 : AUD 0.0654
3000 : AUD 0.0619
6000 : AUD 0.0584
15000 : AUD 0.0549

90210
Ship by Tue. 15 Oct to Mon. 21 Oct
MOQ : 3000
Multiples : 3000
3000 : AUD 0.0543
9000 : AUD 0.0437
24000 : AUD 0.0433
45000 : AUD 0.0384

2729
Ship by Tue. 15 Oct to Mon. 21 Oct
MOQ : 1
Multiples : 1
1 : AUD 0.2925
10 : AUD 0.1922
25 : AUD 0.1525
100 : AUD 0.1087
500 : AUD 0.0543

26190
Ship by Tue. 15 Oct to Mon. 21 Oct
MOQ : 304
Multiples : 1
304 : AUD 0.0881
500 : AUD 0.0871
1000 : AUD 0.0654
3000 : AUD 0.0621
6000 : AUD 0.0586
15000 : AUD 0.0553

90210
Ship by Tue. 15 Oct to Mon. 21 Oct
MOQ : 3000
Multiples : 3000
3000 : AUD 0.0543
9000 : AUD 0.0437
24000 : AUD 0.0433
45000 : AUD 0.0384

32010
Ship by Tue. 15 Oct to Mon. 21 Oct
MOQ : 3000
Multiples : 3000
3000 : AUD 0.0549
9000 : AUD 0.0506
27000 : AUD 0.0499
51000 : AUD 0.0477
102000 : AUD 0.0471

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Series
Packaging
Height
Length
Width
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
Brand Category
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We are delighted to provide the MMBT5088LT1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMBT5088LT1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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The MMBT5088LT1G is an NPN transistor, manufactured by ON Semiconductor, and packaged in a 3-pin SOT-23 surface-mount package. The transistor is a surface-mount device designed for use in a variety of general-purpose switched and amplified applications. The device features a maximum voltage rating of 30V and a maximum continuous collector current of 0.05A. The device features an integrated general-purpose base-emitter structure for high-speed switching.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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