Complementary Power Transistors DPAK For Surface Mount Applications MJD31 (NPN), MJD32 (PNP) Designed for general purpose amplifier and low speed switching applications. www.onsemi.com Features Lead Formed for Surface Mount Applications in Plastic Sleeves SILICON Straight Lead Version in Plastic Sleeves (1 Suffix) POWER TRANSISTORS Lead Formed Version in 16 mm Tape and Reel (T4 Suffix) 3 AMPERES Electrically Similar to Popular TIP31 and TIP32 Series 40 AND 100 VOLTS Epoxy Meets UL 94, V0 0.125 in 15 WATTS NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 COMPLEMENTARY Qualified and PPAP Capable COLLECTOR COLLECTOR These Devices are PbFree and are RoHS Compliant 2,4 2,4 MAXIMUM RATINGS 1 1 Rating Symbol Max Unit BASE BASE CollectorEmitter Voltage V Vdc CEO MJD31, MJD32 40 3 3 MJD31C, MJD32C 100 EMITTER EMITTER CollectorBase Voltage V Vdc CB MJD31, MJD32 40 4 MJD31C, MJD32C 100 EmitterBase Voltage V 5.0 Vdc EB 4 Collector Current Continuous I 3.0 Adc C Collector Current Peak I 5.0 Adc CM 1 2 1 2 3 Base Current I 1.0 Adc B 3 Total Power Dissipation P W DPAK IPAK D T = 25C 15 W/C CASE 369C CASE 369D C 0.12 Derate above 25C STYLE 1 STYLE 1 Total Power Dissipation P W D 1.56 T = 25C MARKING DIAGRAMS W/C A 0.012 Derate above 25C Operating and Storage Junction Temperature T , T 65 to C J stg Range +150 YWW AYWW ESD Human Body Model HBM 3B V J3xxG J3xxG ESD Machine Model MM C V Stresses exceeding those listed in the Maximum Ratings table may damage DPAK IPAK the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. A = Site Code Y = Year THERMAL CHARACTERISTICS WW = Work Week xx = 1, 1C, 2, or 2C Characteristic Symbol Max Unit G = PbFree Package Thermal Resistance, JunctiontoCase R 8.3 C/W JC Thermal Resistance, JunctiontoAmbient* R 80 C/W JA ORDERING INFORMATION Lead Temperature for Soldering Purposes T 260 C L See detailed ordering and shipping information in the package dimensions section on page 8 of this data sheet. *These ratings are applicable when surface mounted on the minimum pad sizes recommended. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: May, 2020 Rev. 17 MJD31/DMJD31 (NPN), MJD32 (PNP) ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (Note 1) V Vdc CEO(sus) (I = 30 mAdc, I = 0) C B MJD31, MJD32 40 MJD31C, MJD32C 100 I Adc Collector Cutoff Current CEO (V = 40 Vdc, I = 0) CE B 50 MJD31, MJD32 (V = 60 Vdc, I = 0) CE B 50 MJD31C, MJD32C ICES Adc Collector Cutoff Current 20 (V = Rated V , V = 0) CE CEO EB Emitter Cutoff Current I mAdc EBO 1 (V = 5 Vdc, I = 0) BE C ON CHARACTERISTICS (Note 1) h DC Current Gain FE (I = 1 Adc, V = 4 Vdc) 25 C CE (I = 3 Adc, V = 4 Vdc) 10 50 C CE V Vdc CollectorEmitter Saturation Voltage CE(sat) 1.2 (I = 3 Adc, I = 375 mAdc) C B BaseEmitter On Voltage V Vdc BE(on) 1.8 (I = 3 Adc, V = 4 Vdc) C CE DYNAMIC CHARACTERISTICS f MHz Current Gain Bandwidth Product (Note 2) T 3 (I = 500 mAdc, V = 10 Vdc, f = 1 MHz) C CE test h SmallSignal Current Gain fe 20 (I = 0.5 Adc, V = 10 Vdc, f = 1 kHz) C CE Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 2. f = h f . T fe test www.onsemi.com 2