MB10S ON Semiconductor

Bridge Rectifiers, 0.5 A MB10S Description The MB family of bridge rectifiers is a 0.5 A rectifier family that achieves high surge current absorption within a very small foot print. 2 Within its small 35 mm form factor, the MB family shines in its surge www.onsemi.com capability. In order to absorb high surge currents, the design supports 2 2 a35A I rating and a 5.0 A Sec I T rating. Devices in the family FSM are also rated to breakdown voltages of up to 1000 V. These features make the MB family ideal for small power supplies that need a little extra surge capability. Features LowLeakage SOIC4 W Surge Overload Rating: 35 A peak CASE 751EP Ideal for Printed Circuit Board UL Certified: UL E258596 MARKING DIAGRAM This Device is PbFree and RoHS Compliant 2 1 + Y&Z&3 MB10S 3 4 Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = 3Digit Data Code (Year & Week) MB10S = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2010 1 Publication Order Number: September, 2019 Rev. 2 MB10S/DMB10S ABSOLUTE MAXIMUM RATINGS (Values are at T = 25C unless otherwise noted) A Symbol Parameter Value Unit V Maximum Repetitive Reverse Voltage 1000 V RRM V Maximum RMS Bridge Input Voltage 700 V RMS V DC Reverse Voltage (Rated V ) 1000 V R R I Average Rectified Forward Current at T = 50C A A F(AV) On GlassEpoxy PCB 0.5 On Aluminum Substrate 0.8 I NonRepetitive Peak Forward Surge Current: 35 A FSM 8.3 ms Single HalfSineWave T Storage Temperature Range 55 to +150 C STG T Operating Junction Temperature Range 55 to +150 C J Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter Value Unit P Power Dissipation 1.4 W D Thermal Resistance, Junction to Ambient, per Leg (Note 1) C/W R 85 JA Thermal Resistance, Junction to Lead, per Leg (Note 1) R 20 C/W JL 1. Device mounted on PCB with 0.5 0.5 inch (13 13 mm) lead length. ELECTRICAL CHARACTERISTICS (Values are at T = 25C unless otherwise noted) A Symbol Parameter Conditions Value Unit V Maximum Forward Voltage, per Diode I = 0.5 A 1.0 V F F I Maximum Reverse Current, per Diode T = 25C 5.0 A R A at Rated V R T = 125C 0.5 mA A 2 2 2 I t I t Rating for Fusing A s t < 8.3 ms 5.0 C Typical Capacitance, per Diode V = 4.0 V, f = 1.0 MHz 13 pF T R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Part Number Marking Package Shipping MB10S MB10S SOIC4 W 3,000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2