NPN Epitaxial Silicon Transistor KSC2328A Features Audio Power Amplifier Application www.onsemi.com Complement to KSA928A 3 W Output Application ABSOLUTE MAXIMUM RATINGS (Values are at T = 25C unless otherwise noted.) A Symbol Parameter Value Unit V CollectorBase Voltage 30 V CBO TO92 3 LF TO92 3 CASE 135AM CASE 135AP V CollectorEmitter Voltage 30 V CEO V EmitterBase Voltage 5 V EBO MARKING DIAGRAM I Collector Current 2 A C T Junction Temperature 150 C J T Storage Temperature 55 to +150 C STG AC2 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be 328AX assumed, damage may occur and reliability may be affected. YWW 1: Emitter 2: Collector THERMAL CHARACTERISTICS 3: Base (Values are at T = 25C unless otherwise noted.) (Note 1) A Symbol Parameter Value Unit 12 3 P Power Dissipation 1000 mW D A = Assembly Code Derate Above 25 C 8.0 mW/C C2328A = Device Code X = O / Y R Thermal Resistance, 125 C/W JA JunctiontoAmbient YWW = Date Code 1. PCB size: FR4, 76 mm 114 mm 1.57 mm (3.0 inch 4.5 inch 0.062 inch) with minimum land pattern size. ORDERING INFORMATION Device Package Shipping KSC2328AOTA TO92 3 LF 2000 / (PbFree) FanFold KSC2328AYBU TO92 3 6000 / (PbFree) Bulk Bag KSC2328AYTA TO92 3 LF 2000 / (PbFree) FanFold Semiconductor Components Industries, LLC, 2002 1 Publication Order Number: March, 2021 Rev. 2 KSC2328A/DKSC2328A ELECTRICAL CHARACTERISTICS (Values are at T = 25C unless otherwise noted.) A Symbol Parameter Conditions Min. Typ. Max. Unit BV CollectorBase Breakdown Voltage I = 100 A, I = 0 30 V CBO C E BV CollectorEmitter Breakdown Voltage I = 10 mA, I = 0 30 V CEO C B BV EmitterBase Breakdown Voltage I = 1 mA, I = 0 5 V EBO E C I Collector CutOff Current V = 30 V, I = 0 100 nA CBO CB E I Emitter CutOff Current V = 5 V, I = 0 100 nA EBO EB C h DC Current Gain V = 2 V, I = 500 mA 100 320 FE CE C V (on) BaseEmitter On Voltage V = 2 V, I = 500 mA 1.0 V BE CE C V (sat) CollectorEmitter Saturation Voltage I = 1.5 A, I = 0.03 A 2.0 V CE C B f Current Gain Bandwidth Product V = 2 V, I = 500 mA 120 MHz T CE C C Collector Output Capacitance V = 10 V, I = 0, f = 1 MHz 30 pF ob CB E Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. h CLASSIFICATION FE Classification O Y h 100 ~ 200 160 ~ 320 FE www.onsemi.com 2