NPN Epitaxial Silicon Transistor KSC1845 Features Audio Frequency LowNoise Amplifier www.onsemi.com Complement to KSA992 This is a PbFree Device MAXIMUM RATINGS (Values are at T = 25C unless otherwise noted.) A Symbol Parameter Value Unit V CollectorBase Voltage 120 V 1. Emitter CBO 2. Collector V CollectorEmitter Voltage 120 V CEO 3. Base 1 V EmitterBase Voltage 5 V 2 EBO 3 I Collector Current 50 mA C TO92 3 4.83x4.76 LEADFORMED I Base Current 10 mA B CASE 135AR T Junction Temperature 150 C J T Storage Temperature 55 to 150 C MARKING DIAGRAM STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be AC1 assumed, damage may occur and reliability may be affected. 845X YWW THERMAL CHARACTERISTICS (Values are at T = 25C unless otherwise A noted.) (Note 1) Symbol Parameter Value Unit P Power Dissipation 500 mW D Derate Above 25C 4 mW/C R Thermal Resistance, 250 C/W JA JunctiontoAmbient A = Assembly Code 1. PCB size: FR4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) C1845 = Device Code with minimum land pattern size. X = P / F / E / U YWW = Date Code ORDERING INFORMATION Device Package Shipping KSC1845FTA TO92 3L 2000 / FanFold (PbFree) Semiconductor Components Industries, LLC, 2002 1 Publication Order Number: April, 2021 Rev. 2 KSC1845/DKSC1845 ELECTRICAL CHARACTERISTICS (Values are at T = 25C unless otherwise noted.) A Symbol Parameter Conditions Min Typ Max Unit BV CollectorBase Breakdown Voltage I = 100 A, I = 0 120 V CBO C A BV CollectorEmitter Breakdown Voltage I = 1 mA, I = 0 120 V CEO C B BV EmitterBase Breakdown Voltage I = 100 A, I = 0 5 V EBO E C I Collector CutOff Current V = 120 V, I = 0 50 nA CBO CB E I Emitter CutOff Current V = 5 V, I = 0 50 nA EBO EB C h DC Current Gain V = 6 V, I = 0.1 mA 150 580 FE1 CE C h V = 6 V, I = 1 mA 200 600 1200 FE2 CE C V (on) BaseEmitter On Voltage V = 6 V, I = 1 mA 0.55 0.59 0.65 V BE CE C V (sat) CollectorEmitter Saturation Voltage I = 10 mA, I = 1 mA 0.07 0.30 V CE C B f Current Gain Bandwidth Product V = 6 V, I = 1 mA 50 100 MHz T CE C C Output Capacitance V = 30 V, I = 0, f = 1 MHz 1.6 2.5 pF ob CB E NF Noise Figure V = 5 V, I = 1.0 mA, 7 dB CE C R = 100 k , f = 1 kHz S Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. h CLASSIFICATION FE Classification P F E U h 200~400 300~600 400~800 600~1200 FE2 www.onsemi.com 2