PNP Epitaxial Silicon Transistor KSA992 Features Audio Frequency LowNoise Amplifier www.onsemi.com Complement to KSC1845 These are PbFree Devices MAXIMUM RATINGS (Values are at T = 25C unless otherwise noted.) A Symbol Parameter Value Unit V CollectorBase Voltage 120 V 1. Emitter CBO 2. Collector V CollectorEmitter Voltage 120 V CEO 3. Base 1 1 2 V EmitterBase Voltage 5 V 2 EBO 3 3 I Collector Current 50 mA C TO92 3 4.825x4.76 TO92 3 4.83x4.76 CASE 135AN LEADFORMED I Base Current 10 mA B CASE 135AR T Junction Temperature 150 C J T Storage Temperature 55 to 150 C MARKING DIAGRAM STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be AA9 AA9 assumed, damage may occur and reliability may be affected. 92X 92X YWW YWW THERMAL CHARACTERISTICS (Values are at T = 25C unless otherwise A noted.) (Note 1) Symbol Parameter Value Unit P Power Dissipation 500 mW D Derate Above 25C 4 mW/C R Thermal Resistance, 250 C/W JA JunctiontoAmbient 1. PCB size: FR4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) A = Assembly Code with minimum land pattern size. A992 = Device Code X = F / FA / FB YWW = Date Code ORDERING INFORMATION See detailed ordering and shipping information on page 4 of this data sheet. Semiconductor Components Industries, LLC, 2004 1 Publication Order Number: April, 2021 Rev. 3 KSA992/DKSA992 ELECTRICAL CHARACTERISTICS (Values are at T = 25C unless otherwise noted.) A Symbol Parameter Conditions Min Typ Max Unit I Collector CutOff Current V = 120 V, I = 0 50 nA CBO CB E I Collector CutOff Current V = 100 V, I = 0 1 A CEO CE B I Emitter CutOff Current V = 5 V, I = 0 50 nA EBO EB C h DC Current Gain V = 6 V, I = 0.1 mA 150 500 FE1 CE C h V = 6 V, I = 1 mA 200 500 800 FE2 CE C V (on) BaseEmitter On Voltage V = 6 V, I = 1 mA 0.55 0.61 0.65 V BE CE C V (sat) CollectorEmitter Saturation Voltage I = 10 mA, I = 1 mA 0.09 0.30 V CE C B f Current Gain Bandwidth Product V = 6 V, I = 1 mA 50 100 MHz T CE C C Output Capacitance V = 30 V, I = 0, f = 1 MHz 2 3 pF ob CB E NF Noise Figure V = 5 V, I = 1.0 mA, 7 dB CE C R = 100 k , f = 1 kHz S Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. h CLASSIFICATION FE Classification P F FA FB E h 200~400 300~600 300~470 430~600 400~800 FE2 www.onsemi.com 2