MOSFET N-Channel, Logic Level, POWERTRENCH 60 V, 4 A, 60 m FDC5661N-F085 Features www.onsemi.com R = 47 m at V = 10 V, I = 4.3 A DS(on) GS D R = 60 m at V = 4.5 V, I = 4 A DS(on) GS D S D Typ Q = 14.5 nC at V = 10 V g(TOT) GS D Low Miller Charge G UIS Capability D D AECQ101 Qualified and PPAP Capable Pin 1 This Device is PbFree, Halogen Free/BFR Free and is RoHS TSOT236 Compliant CASE 419BL Applications MARKING DIAGRAM DC/DC Converter Motor Drives XXX M MOSFET MAXIMUM RATINGS (T = 25C unless otherwise noted) A 1 Rating Symbol Value Unit XXX = Specific Device Code Drain to Source Voltage V 60 V DSS M = Date Code Gate to Source Voltage V 20 V GS = PbFree Package Drain Current Continuous (V = 10 V) I 4.3 A GS D (Note: Microdot may be in either location) Pulsed 20 PIN CONNECTIONS Single Pulse Avalanche Energy (Note 1) E 81 mJ AS Power Dissipation P 1.6 W D 1 6 Operating and Storage Temperature T , T 55 to C J STG +150 2 5 Thermal Resistance Junction to Case R 30 C/W JC Thermal Resistance Junction to Ambient R 78 C/W 3 4 JA 2 TO263, 1in Copper Pad Area Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be ORDERING INFORMATION assumed, damage may occur and reliability may be affected. See detailed ordering and shipping information on page 6 of 1. E of 81 mJ is 100% test at L = 14 mH, I = 3.4 A, Starting T = 25C AS AS J this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: June, 2021 Rev. 3 FDC5661NF085/DFDC5661N F085 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain to Source Breakdown Voltage B I = 250 A, V = 0 V 60 V VDSS D GS Zero Gate Voltage Drain Current I V = 48 V, V = 0 V 1 A DSS DS GS T = 150C 250 A Gate to Source Leakage Current I V = 20 V 100 nA GSS GS ON CHARACTERISTICS Gate to Source Threshold Voltage V V = V , I = 250 A 1 2.0 3 V GS(th) GS DS D Drain to Source OnResistance R V = 10 V, I = 4.3 A 38 47 m DS(on) GS D V = 4.5 V, I = 4 A 46 60 GS D V = 10 V, I = 4.3 A T = 150C 69 86 GS D J DYNAMIC CHARACTERISTICS Input Capacitance C V = 0 V, V = 25 V, 763 pF iss GS DS f = 1 MHz Output Capacitance C 68 pF oss Reverse Transfer Capacitance C 36 pF rss Gate Resistance R f = 1 MHz 2.6 G Total Gate Charge at 10 V Q V = 0 to 10 V, V = 30 V, I = 4.3 A 14.5 19 nC g(TOT) GS DD D V = 30 V, I = 4.3 A Gate to Source Gate Charge Q 2.4 nC gs DD D Gate to Drain Miller Charge Q 2.9 nC gd SWITCHING CHARACTERISTICS V = 10 V, V = 30 V, TurnOn Time t 17.6 ns on GS DD I = 4.3 A, R = 6 , D GS TurnOn Delay Time t 7.2 ns d(on) Rise Time t 1.6 ns r TurnOff Delay Time t 19.3 ns d(off) Fall Time t 3.1 ns f TurnOff Time t 36 ns off DRAINSOURCE DIODE CHARACTERISTICS Source to Drain Diode Voltage V I = 4.3 A 0.8 1.25 V SD SD I = 2.1 A 0.8 1.0 SD Reverse Recovery Time t I = 4.3 A, dI /dt = 100 A/ s 18.4 24 ns rr SD SD Reverse Recovery Charge Q 10.0 13 nC rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2