BSS138 ON Semiconductor

DATA SHEET www.onsemi.com D N-Channel Logic Level Enhancement Mode Field Effect Transistor G BSS138 S General Description These NChannel enhancement mode field effect transistors are produced using onsemis proprietary, high cell density, DMOS technology. These products have been designed to minimize onstate resistance while provide rugged, reliable, and fast switching SOT233 performance. These products are particularly suited for low voltage, CASE 31808 low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. MARKING DIAGRAM Features 3 0.22 A, 50 V Drain R = 3.5 V = 10 V DS(on) GS R = 6.0 V = 4.5 V DS(on) GS SSM High Density Cell Design for Extremely Low R DS(on) Rugged and Reliable Compact Industry Standard SOT23 Surface Mount Package 1 2 Gate Source This Device is PbFree and Halogen Free SS = Specific Device Code M = Date Code* = PbFree Package (Note: Microdot may be in either location) *Date Code orientation and/or position may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping BSS138, SOT233 3000 / BSS138G (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2005 1 Publication Order Number: November, 2021 Rev. 6 BSS138/DBSS138 ABSOLUTE MAXIMUM RATINGS T = 25C unless otherwise noted. A Symbol Parameter Ratings Unit V DrainSource Voltage 50 V DSS V GateSource Voltage 20 GSS I Drain Current Continuous (Note 1) 0.22 A D Drain Current Pulsed (Note 1) 0.88 P Maximum Power Dissipation (Note 1) 0.36 W D Derate Above 25C 2.8 mW/C T , T Operating and Storage Junction Temperature Range 55 to +150 C J STG T Maximum Lead Temperature for Soldering Purposes, 1/16 from Case 300 L for 10 s Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS T = 25C unless otherwise noted. A Symbol Parameter Ratings Unit R Thermal Resistance, JunctiontoAmbient (Note 1) 350 C/W JA ELECTRICAL CHARACTERISTICS T = 25C unless otherwise noted. A Symbol Parameter Test Conditions Min Typ Max Unit OFF CHARACTERISTICS BV DrainSource Breakdown Voltage V = 0 V, I = 250 A 50 V DSS GS D Breakdown Voltage Temperature I = 250 A, Referenced to 72 mV/C V D GS(th) Coefficient 25C T J I Zero Gate Voltage Drain Current V = 50 V, V = 0 V 0.5 A DSS DS GS V = 50 V, V = 0 V, 5 DS GS T = 125C J V = 30 V, V = 0 V 100 nA DS GS I GateBody Leakage V = 20 V, V = 0 V 100 GSS GS DS ON CHARACTERISTICS V Gate Threshold Voltage V = V , I = 1 mA 0.8 1.3 1.5 V GS(th) DS GS D Gate Threshold Voltage Temperature I = 1 mA, Referenced to 25C 2 mV/C V D GS(th) Coefficient T J R Static DrainSource OnResistance V = 10 V, I = 0.22 A 0.7 3.5 DS(on) GS D V = 4.5 V, I = 0.22 A 1.0 6.0 GS D V = 10 V, I = 0.22 A, 1.1 5.8 GS D T = 125C J I OnState Drain Current V = 10 V, V = 5 V 0.2 A D(on) GS DS g Forward Transconductance V = 10 V, I = 0.22 A 0.12 0.5 S FS DS D DYNAMIC CHARACTERISTICS C Input Capacitance V = 25 V, V = 0 V, 27 pF iss DS GS f = 1.0 MHz C Output Capacitance 13 pF oss C Reverse Transfer Capacitance 6 pF rss R Gate Resistance V = 15 mV, f = 1.0 MHz 9 G GS www.onsemi.com 2