BC856BM3, NSVBC856BM3 General Purpose Transistor PNP Silicon This transistor is designed for general purpose amplifier applications. It is housed in the SOT723 which is designed for low power surface mount applications. BC856BM3, NSVBC856BM3 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage V V (BR)CEO (I = 10 mA) 65 C Collector Emitter Breakdown Voltage V V (BR)CES (I = 10 A, V = 0) 80 C EB Collector Base Breakdown Voltage V V (BR)CBO (I = 10 A) 80 C Emitter Base Breakdown Voltage V V (BR)EBO (I = 1.0 A) 5.0 E Collector Cutoff Current (V = 30 V) I 15 nA CB CBO (V = 30 V, T = 150C) 4.0 A CB A ON CHARACTERISTICS DC Current Gain h FE (I = 10 A, V = 5.0 V) 150 C CE (I = 2.0 mA, V = 5.0 V) 220 290 475 C CE Collector Emitter Saturation Voltage (I = 10 mA, I = 0.5 mA) V 0.3 V C B CE(sat) Collector Emitter Saturation Voltage (I = 100 mA, I = 5.0 mA) 0.65 C B Base Emitter Saturation Voltage (I = 10 mA, I = 0.5 mA) V 0.7 V C B BE(sat) Base Emitter Saturation Voltage (I = 100 mA, I = 5.0 mA) 0.9 C B Base Emitter Voltage (I = 2.0 mA, V = 5.0 V) V 0.6 0.75 mV C CE BE(on) Base Emitter Voltage (I = 10 mA, V = 5.0 V) 0.82 C CE SMALLSIGNAL CHARACTERISTICS Current Gain Bandwidth Product f MHz T (I = 10 mA, V = 5.0 Vdc, f = 100 MHz) 100 C CE Output Capacitance C pF obo (V = 10 V, f = 1.0 MHz) 4.5 CB Noise Figure NF dB (I = 0.2 mA, V = 5.0 Vdc, R = 2.0 k , f = 1.0 kHz, BW = 200 Hz) 10 C CE S