2SC4002 Ordering number : ENN2960A NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications 2SC4002 Features High breakdown voltage. Adoption of MBIT process. Excellent h linearity. FE Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V 400 V CBO Collector-to-Emitter Voltage V 400 V CEO Emitter-to-Base Voltage V 5V EBO Collector Current I 200 mA C Collector Current (Pulse) I 400 mA CP Collector Dissipation P 600 mW C Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =300V, I =0 0.1 A CBO CB E Emitter Cutoff Current I V =4V, I =0 0.1 A EBO EB C DC Current Gain h V =10V, I =50mA 60* 200* FE CE C Gain-Bandwidth Product f V =30V, I =10mA 70 MHz T CE C Collector-to-Emitter Saturation Voltage V I =50mA, I =5mA 0.6 V CE(sat) C B Base-to-Emitter Saturation Voltage V I =50mA, I =5mA 1.0 V BE(sat) C B Collector-to-Base Breakdown Voltage V I =10A, I =0 400 V (BR)CBO C E Collector-to-Emitter Breakdown Voltage V I =1mA, R = 400 V (BR)CEO C BE Emitter-to-Base Breakdown Voltage V I =10A, I =0 5 V (BR)EBO E C Output Capacitance C V =30V, f=1MHz 4 pF ob CB Reverse Transfer Capacitance C V =30V, f=1MHz 3 pF re CB * : The 2SC4002 is classified by 50mA h as follows : Continued on next page. FE Rank D E h 60 to 120 100 to 200 FE 2011, SCILLC. All rights reserved. Publication Order Number: www.onsemi.com Rev.0 I Page 1 of 3 I www.onsemi.com Jan-2011, Rev. 0 2SC4002/D25C, --30C 2SC4002 Continued from preceding page. Ratings Parameter Symbol Conditions Unit min typ max Turn-ON Time t See specified test circuit. 0.25 s on Turn-OFF Time t See specified test circuit. 5.0 s off Package Dimensions Switching Time Test Circuit unit : mm 2003B PW=20s I B1 D.C.1% I 5.0 B2 OUTPUT INPUT 4.0 4.0 R B V R R L 50 V =150V CC + + 0.45 100F 470F 0.5 V = --1V BE 0.44 0.45 10I = --10I =I =50mA B1 B2 C R =3k, R =200 at I =50mA L B C 1 : Emitter 12 3 2 : Collector 3 : Base 1.3 1.3 SANYO : NP I -- V h -- I C BE FE C 5 120 V =10V V =10V CE CE 3 100 2 80 100 7 60 5 3 40 2 20 10 7 0 5 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 772 35 2 3 57 23 1.0 10 100 Base-to-Emitter Voltage, V V Collector Current, I mA BE ITR06235 C ITR06236 V (sat) -- I V (sat) -- I BE C CE C 2 10 I / I =10 I / I =10 C B C B 7 1.0 5 7 5 3 3 2 2 1.0 0.1 7 7 5 5 3 3 2 2 7323 5 7 25 72 772 35 2 3 57 2 3 1.0 10 100 1.0 10 100 Collector Current, I mA Collector Current, I mA C ITR06237 ITR06238 C Rev.0 I Page 2 of 3 I www.onsemi.com Ta=70C Ta=70C --30C 25C Ta= --30C 25C 70C Ta=70C 25C --30C Collector-to-Emitter Saturation Voltage, V (sat) V Collector Current, I mA CE C 0.6 2.0 14.0 5.0 Base-to-Emitter DC Current Gain, h Saturation Voltage, V (sat) V FE BE