Ordering number : EN2555C 2SB1302 Bipolar Transisitor 2SB1302 Continued from preceding page. Parameter Symbol Conditions Ratings Unit 2 Collector Dissipation P When mounted on ceramic substrate (250mm 0.8mm) 1.3 W C Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =--20V, I =0A --500 nA CBO CB E Emitter Cutoff Current I V =--4V, I =0A --500 nA EBO EB C h1V =--2V, I =--500mA 140* 400* FE CE C DC Current Gain h2V =--2V, I =--4A 60 FE CE C Gain-Bandwidth Product f V =--5V, I =--200mA 320 MHz T CE C Output Capacitance Cob V =--10V, f=1MHz 60 pF CB Collector to Emitter Saturation Voltage V (sat) I =--3A, I =--60mA --250 --500 mV CE C B Base to Emitter Saturation Voltage V (sat) I =--3A, I =--60mA --1.0 --1.3 V BE C B Collector to Base Breakdown Voltage V I =--10 A, I =0A --25 V (BR)CBO C E Collector to Emitter Breakdown Voltage V I =--1mA, R = --20 V (BR)CEO C BE Emitter to Base Breakdown Voltage V I =--10A, I =0A --5 V (BR)EBO E C Turn-ON Time t 40 ns on Storage Time t See speci ed Test Circuit. 200 ns stg Fall Time t 10 ns f * : 2SB1302 is classi ed by 500mA h as follows : FE Rank S T h 140 to 280 200 to 400 FE Switching Time Test Circuit I B1 PW=20s OUTPUT D.C.1% I B2 INPUT R V B R R L + + 50 100F 470F V =5V V = --10V BE CC I =10I = --10I = --2A C B1 B2 Ordering Information Device Package Shipping memo 2SB1302S-TD-E PCP 1,000pcs./reel Pb Free 2SB1302T-TD-E PCP 1,000pcs./reel No.2555-2/5