Ordering number : EN2040C 2SB1122 Bipolar Transistor 2SB1122 Continued from preceding page. Parameter Symbol Conditions Ratings Unit 2 Collector Dissipation P When mounted on ceramic substrate (250mm 0.8mm) 1.3 W C Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =--50V, I =0A --100 nA CBO CB E Emitter Cutoff Current I V =--4V, I =0A --100 nA EBO EB C h1V =--2V, I =--100mA 140* 400* FE CE C DC Current Gain h2V =--2V, I =--1A 30 FE CE C Gain-Bandwidth Product f V =--10V, I =--50mA 150 MHz T CE C Output Capacitance Cob V =--10V, f=1MHz 12 pF CB Collector to Emitter Saturation Voltage V (sat) I =--500mA, I =--50mA --180 --500 mV CE C B Base to Emitter Saturation Voltage V (sat) I =--500mA, I =--50mA --0.9 --1.2 V BE C B Collector to Base Breakdown Voltage V I =--10 A, I =0A --60 V (BR)CBO C E Collector to Emitter Breakdown Voltage V I =--1mA, R = --50 V (BR)CEO C BE Emitter to Base Breakdown Voltage V I =--10A, I =0A --5 V (BR)EBO E C Turn-ON Time t 40 ns on Storage Time t See speci ed Test Circuit. 300 ns stg Fall Time t 30 ns f * : 2SB1122 is classi ed by 100mA h as follows : FE Rank S T h 140 to 280 200 to 400 FE Switching Time Test Circuit I B1 PW=20s D.C.1% I B2 OUTPUT INPUT R V B R R L 50 50 + + 100F 470F V =5V V = --25V BE CC I =10I = --10I = --500mA C B1 B2 Ordering Information Device Package Shipping memo 2SB1122S-TD-E PCP 1,000pcs./reel Pb Free 2SB1122T-TD-E PCP 1,000pcs./reel I -- V I -- V C CE C BE --1200 --1.0 V = --2V CE --1000 --0.8 --800 --0.6 --600 --0.4 --400 --0.2 --200 I =0mA B 0 0 0 --1 --2 --3 --4 --5 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 Collector to Emitter Voltage, V -- V ITR08877 Base to Emitter Voltage, V -- V ITR08879 CE BE No.2040-2/4 --1mA --2mA --4mA --6mA --8mA --10mA --12mA Ta=75C 25C --25C Collector Current, I -- A C Collector Current, I -- mA C