2N5194G, 2N5195G Silicon PNP Power Transistors These devices are designed for use in power amplifier and switching circuits excellent safe area limits. Features 2N5194G, 2N5195G ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) (Note 2) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (Note 3) V Vdc CEO(sus) (I = 0.1 Adc, I = 0) C B 2N5194G 60 2N5195G 80 Collector Cutoff Current I mAdc CEO (V = 60 Vdc, I = 0) CE B 2N5194G 1.0 (V = 80 Vdc, I = 0) CE B 2N5195G 1.0 Collector Cutoff Current I mAdc CEX (V = 60 Vdc, V = 1.5 Vdc) CE BE(off) 2N5194G 0.1 (V = 80 Vdc, V = 1.5 Vdc) CE BE(off) 2N5195G 0.1 (V = 60 Vdc, V = 1.5 Vdc, T = 125 C) CE BE(off) C 2N5194G 2.0 (V = 80 Vdc, V = 1.5 Vdc, T = 125 C) CE BE(off) C 2.0 2N5195G Collector Cutoff Current I mAdc CBO (V = 60 Vdc, I = 0) CB E 2N5194G 0.1 (V = 80 Vdc, I = 0) CB E 2N5195G 0.1 Emitter Cutoff Current I mAdc EBO (V = 5.0 Vdc, I = 0) 1.0 BE C ON CHARACTERISTICS DC Current Gain (Note 3) h FE (I = 1.5 Adc, V = 2.0 Vdc) C CE 2N5194G 25 100 2N5195G 20 80 (I = 4.0 Adc, V = 2.0 Vdc) C CE 2N5194G 10 2N5195G 7.0 CollectorEmitter Saturation Voltage (Note 3) V Vdc CE(sat) (I = 1.5 Adc, I = 0.15 Adc) 0.6 C B (I = 4.0 Adc, I = 1.0 Adc) 1.4 C B BaseEmitter On Voltage (Note 3) V Vdc BE(on) (I = 1.5 Adc, V = 2.0 Vdc) 1.2 C CE DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product f MHz T (I = 1.0 Adc, V = 10 Vdc, f = 1.0 MHz) 2.0 C CE Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Indicates JEDEC registered data. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.